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Results 181 - 200 of about 271 publications

N Title Journal or book Year
181 V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, H. Lange.
Electronic properties of osmium disilicide
Appl. Phys. Lett 70(8), 976 977 1997
182 Solid State Rapid Thermal Processing of Semiconductors No info 1997
183 V. E. Borisenko, B. O, M. Cavanagh, A. I. Rat, E. A. Stepanova, A. V. Mudryi, O. S. Katernoga, V. M. Parkun, N. V. Gaponenko.
Erbium and terbium photoluminescence in silica sol-gel films on porous alumina
Thin Solid films Vol. 297, 12. P. 202206 1997
184 V. E. Borisenko, A. B. Filonov, A. N. Kholod.
Electronic properties of nanosize silicon-oxygen clusters
Phys. Stat. Sol. (a) 165(1), 57 61 1997
185 Integrated optoelectronic unit based on porous silicon No info 1997
186 Erbium and terbium luminescence from sol-gel derived In2O3 films on porous silicon No info 1997
187 Transport property simulation of p-type b-FeSi2 No info 1997
188 V. E. Borisenko, A. B. Filonov, W. Henrion, H. Lange, St. Brehme, A. Heinrich, G. Behr, H. Griessmann.
Semiconducting transition metal silicides: electronic structure, electrical and thermoelectrical properties
Proceedings of International Conference on Thermoelectrics pp. 267 - 274 1997
189 N. V. Gaponenko, N. I. Silvanovich, A. N. Ponyavina, A. V. Prokofiev, E. P. Petrov, A. M. Kapitonov, I. N. Germanenko, S. V. Gaponenko, V. N. Bogomolov, S. M. Samoilovich.
Photonic band gap phenomenon and optical properties of artificial opals
Phys. Rev. E Vol. 55. P. 76197625 1997
190 V. E. Borisenko, A. B. Filonov, S. V. Gaponenko, V.S. Gurin.
Physics, Chemistry and Application of Nanostructures
Book World Scientific, Singapore 1997
191 V. E. Borisenko, P. J. Hesketh.
Solid State Rapid Thermal Processing of Semiconductors
Book Plenum, New York 1997
192 A. L. Danilyuk, I.I. Abramov.
Model of coherent transport in metal-insulator-midband gap semiconductor-insulator-semiconductors
Appl. Phys. Lett Vol.71, No. 5.- P.665-667. 1997
193 V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, G. V. Petrov, W. Henrion, H. Lange.
Electronic and related properties of crystalline semiconducting iron disilicide
J. Appl. Phys 79(10), 7708 7712 1996
194 V. E. Borisenko, W. Bock, N. N. Vorozov, G. N. Troyanova, N. M. Kazuchits, E. E. Bachilo, V. P. Bondarenko, P. Becker, H. Gnaser, N. V. Gaponenko, H. Oechsner.
Strong 1.54 m luminescence from erbium doped porous silicon
Thin Solid films Vol. 276, 12. P. 171174 1996
195 V. E. Borisenko, V. P. Bondarenko, V. Raiko, R. Spitzl, J. Engemann.
MPCVD diamond deposition on porous silicon pretreated with the bias method
Diamond and Related Materials 5(7), 1063 1069 1996
196 Effects of Doping on the Electronic Properties of Semiconducting Iron Disilicide No info 1996
197 Hall effect investigation of doped and undoped b-FeSi2 No info 1996
198 Effects of Doping on the Electronic Properties of Semiconducting Iron Disilicide Materials Science and Engineering B 37, pp.215-218. 1996
199 L. I. Ivanenko, W. Henrion, H. Lange, St. Brehme, Y. Tomm, K. Irmscher, I. Sieber.
Effects of Doping on the Electronic Properties of Semiconducting Iron Disilicide
Materials Science and Engineering B 37, pp.215-218. 1996
200 L. I. Ivanenko, H. Lange, St. Brehme, P. Stauss, Y. Tomm, G.-U. Reinsperger.
Hall effect investigation of doped and undoped b-FeSi2
Mat. Res. Soc. Symp. Proc. Vol. 402, pp.355-360. 1996
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