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Results 181 - 200 of about 271 publications
| N |
Title |
Journal or book |
Year |
| 181 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, H. Lange.
Electronic properties of osmium disilicide |
Appl. Phys. Lett 70(8), 976 – 977 |
1997 |
| 182 |
Solid State Rapid Thermal Processing of Semiconductors |
No info |
1997 |
| 183 |
V. E. Borisenko, B. O, M. Cavanagh, A. I. Rat, E. A. Stepanova, A. V. Mudryi, O. S. Katernoga, V. M. Parkun, N. V. Gaponenko.
Erbium and terbium photoluminescence in silica sol-gel films on porous alumina |
Thin Solid films Vol. 297, ¹ 1–2. – P. 202–206 |
1997 |
| 184 |
V. E. Borisenko, A. B. Filonov, A. N. Kholod.
Electronic properties of nanosize silicon-oxygen clusters |
Phys. Stat. Sol. (a) 165(1), 57 – 61 |
1997 |
| 185 |
Integrated optoelectronic unit based on porous silicon |
No info |
1997 |
| 186 |
Erbium and terbium luminescence from sol-gel derived In2O3 films on porous silicon |
No info |
1997 |
| 187 |
Transport property simulation of p-type b-FeSi2 |
No info |
1997 |
| 188 |
V. E. Borisenko, A. B. Filonov, W. Henrion, H. Lange, St. Brehme, A. Heinrich, G. Behr, H. Griessmann.
Semiconducting transition metal silicides: electronic structure, electrical and thermoelectrical properties |
Proceedings of International Conference on Thermoelectrics pp. 267 - 274 |
1997 |
| 189 |
N. V. Gaponenko, N. I. Silvanovich, A. N. Ponyavina, A. V. Prokofiev, E. P. Petrov, A. M. Kapitonov, I. N. Germanenko, S. V. Gaponenko, V. N. Bogomolov, S. M. Samoilovich.
Photonic band gap phenomenon and optical properties of artificial opals |
Phys. Rev. E Vol. 55. – P. 7619–7625 |
1997 |
| 190 |
V. E. Borisenko, A. B. Filonov, S. V. Gaponenko, V.S. Gurin.
Physics, Chemistry and Application of Nanostructures |
Book World Scientific, Singapore |
1997 |
| 191 |
V. E. Borisenko, P. J. Hesketh.
Solid State Rapid Thermal Processing of Semiconductors |
Book Plenum, New York |
1997 |
| 192 |
A. L. Danilyuk, I.I. Abramov.
Model of coherent transport in metal-insulator-midband gap semiconductor-insulator-semiconductors |
Appl. Phys. Lett Vol.71, No. 5.- P.665-667. |
1997 |
| 193 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, G. V. Petrov, W. Henrion, H. Lange.
Electronic and related properties of crystalline semiconducting iron disilicide |
J. Appl. Phys 79(10), 7708 – 7712 |
1996 |
| 194 |
V. E. Borisenko, W. Bock, N. N. Vorozov, G. N. Troyanova, N. M. Kazuchits, E. E. Bachilo, V. P. Bondarenko, P. Becker, H. Gnaser, N. V. Gaponenko, H. Oechsner.
Strong 1.54 m luminescence from erbium doped porous silicon |
Thin Solid films Vol. 276, ¹ 1–2. – P. 171–174 |
1996 |
| 195 |
V. E. Borisenko, V. P. Bondarenko, V. Raiko, R. Spitzl, J. Engemann.
MPCVD diamond deposition on porous silicon pretreated with the bias method |
Diamond and Related Materials 5(7), 1063 – 1069 |
1996 |
| 196 |
Effects of Doping on the Electronic Properties of Semiconducting Iron Disilicide |
No info |
1996 |
| 197 |
Hall effect investigation of doped and undoped b-FeSi2 |
No info |
1996 |
| 198 |
Effects of Doping on the Electronic Properties of Semiconducting Iron Disilicide |
Materials Science and Engineering B 37, pp.215-218. |
1996 |
| 199 |
L. I. Ivanenko, W. Henrion, H. Lange, St. Brehme, Y. Tomm, K. Irmscher, I. Sieber.
Effects of Doping on the Electronic Properties of Semiconducting Iron Disilicide |
Materials Science and Engineering B 37, pp.215-218. |
1996 |
| 200 |
L. I. Ivanenko, H. Lange, St. Brehme, P. Stauss, Y. Tomm, G.-U. Reinsperger.
Hall effect investigation of doped and undoped b-FeSi2 |
Mat. Res. Soc. Symp. Proc. Vol. 402, pp.355-360. |
1996 |
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