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Results 201 - 220 of about 271 publications
| N |
Title |
Journal or book |
Year |
| 201 |
A. L. Danilyuk, A.I. Nareiko.
The Oscillatory Relaxation of Surface Conduction of Silicon After Low Magnetic Field Action |
Surface No.9.- P.27-33 (In Russian). |
1996 |
| 202 |
N. V. Gaponenko, H. Gnaser, P. Becker, V. A. Grozhik.
Carbon depth distribution in spin-on silicon dioxide films |
Thin Solid films Vol. 261, ¹ 1–2. – P. 186–191 |
1995 |
| 203 |
V. E. Borisenko, A. B. Filonov, I. E. Tralle, G. V. Petrov.
Silicon band structure calculations by self-consistent crystalline orbital method |
Modeling Simul. Mater. Sci. Eng 3(1), 45 – 52 |
1995 |
| 204 |
V. E. Borisenko, N. V. Gaponenko, E. E. Bachilo, V. M. Parkun, G. E. Malaskevich.
Erbium luminescence in diffusion doped anodic alumina with nanosize pores |
Physics, Chemistry and Application of Nanostructures 80 – 82 |
1995 |
| 205 |
V. E. Borisenko, A. A. Leshok, V. P. Bondarenko, N. M. Kazuchits, L. N. Dolgyi.
Strong 1.54 (m luminescence of porous silicon electrochemically doped with erbium |
Physics, Chemistry and Application of Nanostructures 83 – 86 |
1995 |
| 206 |
V. E. Borisenko, V. Raiko, R. Spitzl, J. Engemann.
Diamond nucleation onto silicon with nanosize pores |
Physics, Chemistry and Application of Nanostructures pp. 93 – 96 |
1995 |
| 207 |
V. E. Borisenko, A. B. Filonov, A. N. Kholod.
Band structure simulation of hexagonal CrSi2 wire |
Physics, Chemistry and Application of Nanostructures pp. 131 – 133 |
1995 |
| 208 |
V. E. Borisenko.
Nanostructure based informatics |
Physics, Chemistry and Application of Nanostructures pp. 246 – 256 |
1995 |
| 209 |
V. E. Borisenko, A. B. Filonov, G. V. Petrov, V. A. Novikov.
Orientation effect in electronic properties of silicon wires |
Appl. Phys. Lett 67(8), 1090 – 1091 |
1995 |
| 210 |
V. E. Borisenko, W. Bock, N. N. Vorozov, G. N. Troyanova, N. M. Kazuchits, E. E. Bachilo, V. P. Bondarenko, P. Becker, H. Gnaser, N. V. Gaponenko, A. A. Leshok, H. Oechsner.
Erbium luminescence in porous silicon doped from spin-on films |
J. Appl. Phys Vol. 77, ¹ 6. – P. 2679–2683 |
1995 |
| 211 |
V. E. Borisenko, A. B. Filonov, S. V. Gaponenko, V.S. Gurin.
Physics, Chemistry and Application of Nanostructures |
Book Nauka i Tekhnika, Minsk |
1995 |
| 212 |
V. E. Borisenko, V. P. Bondarenko, S. V. Gaponenko, I. N. Germanenko.
Spectral characteristics of visible light emission from porous silicon: Quantum confinement or impurity effect? |
J. Appl. Phys 75(5), 2727 – 2729 |
1994 |
| 213 |
V. E. Borisenko, L. I. Ivanenko, E. A. Krushevski.
Combined reaction and diffusion controlled kinetics of silicidation |
Thin Solid films 250(1), 53 – 55 |
1994 |
| 214 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, I. E. Tralle, N. N. Dorozhkin, D. B. Migas, G. V. Petrov, A. M. Anishchik.
Semiconducting properties of hexagonal chromium, molybdenum, and tungsten disilicides |
Phys. Stat. Sol. (b) 186(1), 209 – 215 |
1994 |
| 215 |
V. E. Borisenko, N. V. Gaponenko, I. S. Molchan, V. A. Grozhik, E. E. Bachilo.
Phase formation in gel-semiconductor structures containing rare-earth elements |
Russian Journal of Inorganic Chemistry 39(10), 1564 – 1569 |
1994 |
| 216 |
Combined reaction and diffusion controlled kinetics of silicidation |
No info |
1994 |
| 217 |
V. E. Borisenko, N. V. Gaponenko, L. P. Mileshko, H. Gnaser, V. V. Vasiliev.
Spin-on silicon dioxide films on indium antimony |
Thin Solid films V. 223. – P. 122–128. |
1993 |
| 218 |
Structure and phase transitions in transiently heated thin film Fe- Si system |
No info |
1992 |
| 219 |
V. E. Borisenko.
Solid State Processes in Semiconductors Subjected to Pulse Heating |
Book Nauka I Tekhnika, Minsk. In Russian |
1992 |
| 220 |
V. E. Borisenko, L. I. Ivanenko, S. Y. Nikitin.
Semiconducting properties of chromium disilicide |
Mikroelektronika V.21, N2, pp.69-77 (in Russian) |
1992 |
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