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Results 221 - 240 of about 271 publications
| N |
Title |
Journal or book |
Year |
| 221 |
V. E. Borisenko, L. I. Ivanenko, D. I. Zarovskii.
Structure and phase transitions in transiently heated thin film Fe- Si system |
Mikroelektronika V.21, N6, pp.27-29 (in Russian) |
1992 |
| 222 |
V. E. Borisenko, A. B. Filonov.
Electronic structure calculations for YBa2Cu3O7 by the self-consistent crystalline orbital method |
Phys. Stat. Sol. (b) 168(2), 467 – 477 |
1991 |
| 223 |
Rhenium silicide formation by in-situ solid phase deposition of metal |
No info |
1991 |
| 224 |
V. E. Borisenko, V. V. Tokarev, A. I. Demchenko, A. I. Ivanov.
Influence of boron implantation on phase transformation in nickel silicides |
Appl. Surf. Sci 44(3), 241-247 |
1990 |
| 225 |
A. L. Danilyuk, V.I. Kurmashev, A.L. Matyushkov.
Magnetostatic field influence on electrodeposition of metal films |
Thin Solid films V.189, P.247-255. |
1990 |
| 226 |
A. L. Danilyuk, V. A. Labunov, V.I. Kurmashev, A.L. Matyushkov.
Magnetostatic Field Influence on Electrodeposition of Cuprum |
Proceedings of USSR Academy of Sciences V.311, No.1.- P.139-142. |
1990 |
| 227 |
V. E. Borisenko, D. I. Zarovskii, V. V. Tokarev, T. M. Pyatkova.
Argon ion implantation influence on phase formation and structure of nickel silicides |
Phys. Stat. Sol. (a) 111(2), 499 – 505 |
1989 |
| 228 |
V. E. Borisenko, V. V. Tokarev, T. M. Pyatkova, A. I. Demchenko.
Growth of epitaxial nickel disilicide during rapid thermal processing of argon-implanted nickel films on silicon |
Phys. Stat. Sol. (a) 116(1), 331 – 336 |
1989 |
| 229 |
V. E. Borisenko, A. B. Filonov, S. Y. Nikitin, A. L. Pushkarchuk.
Electronic property simulation of YBa2Cu3O7 films |
Phys. Stat. Sol. (b) 155(1), K127 - K130 |
1989 |
| 230 |
Characterization of chromium silicides formed by rapid thermal processing |
No info |
1989 |
| 231 |
V. E. Borisenko, L. I. Ivanenko, D. I. Zarovskii, G.V. Litvinovich.
Characterization of chromium silicides formed by rapid thermal processing |
Izvestiya vuzov. Physica. N11, p.128-129 (in Russian) |
1989 |
| 232 |
A. L. Danilyuk, I.I. Abramov.
Occupancy Model of the Semiconductor Surface Band States Including Correlation Interactions |
Surface No.8.- P.17-20 (In Russian). |
1989 |
| 233 |
Occupancy Model of the Semiconductor Surface Band States Including Correlation Interactions |
Surface No.8.- P.17-20 (In Russian). |
1989 |
| 234 |
V. E. Borisenko, D. I. Zarovskii, V. V. Tokarev.
Influence of argon implantation on the formation of platinum silicides |
Phys. Stat. Sol. (a) 107(1), K33 - K35 |
1988 |
| 235 |
V. E. Borisenko, S. G. Yudin.
Implanted impurity behavior in silicon subjected to transient heating |
Phys. Stat. Sol. (a) 109(1), 395 – 402 |
1988 |
| 236 |
V. E. Borisenko, S. G. Yudin.
Steady-state solubility of substitutional impurities in silicon |
Phys. Stat. Sol. (a) 101(1), 123 – 127 |
1987 |
| 237 |
V. E. Borisenko, V. A. Labunov, A. M. Dorofeev.
High-temperature treatment of porous silicon |
Phys. Stat. Sol. (a) 102(1), 193 – 198 |
1987 |
| 238 |
V. E. Borisenko, A. G. Dutov, K. E. Lobanova, S. G. Yudin.
Redistribution of phosphorus in implanted laser-annealed silicon during subsequent heat treatment lasting up to tens of seconds |
Sov. Phys. Semicond 21(8), 891 – 892 |
1987 |
| 239 |
V. E. Borisenko, S. G. Yudin, R. M. Bayazitov, D. A. Konovalov, I. B. Khaibullin.
Precipitation of a supersaturated substitutional solution of phosphorus in silicon due to heat treatment for periods of seconds |
Sov. Phys. Semicond 21(8), 917 – 918 |
1987 |
| 240 |
A. L. Danilyuk, I.I. Abramov.
Influence of The Electron Properties of the Interface on the Voltage-Current Characteristic of the Stationary Discharge Plasma-Semiconductor Contact |
Surface No.7.- P.62-67 (In Russian). |
1987 |
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