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Results 221 - 240 of about 271 publications

N Title Journal or book Year
221 V. E. Borisenko, L. I. Ivanenko, D. I. Zarovskii.
Structure and phase transitions in transiently heated thin film Fe- Si system
Mikroelektronika V.21, N6, pp.27-29 (in Russian) 1992
222 V. E. Borisenko, A. B. Filonov.
Electronic structure calculations for YBa2Cu3O7 by the self-consistent crystalline orbital method
Phys. Stat. Sol. (b) 168(2), 467 477 1991
223 Rhenium silicide formation by in-situ solid phase deposition of metal No info 1991
224 V. E. Borisenko, V. V. Tokarev, A. I. Demchenko, A. I. Ivanov.
Influence of boron implantation on phase transformation in nickel silicides
Appl. Surf. Sci 44(3), 241-247 1990
225 A. L. Danilyuk, V.I. Kurmashev, A.L. Matyushkov.
Magnetostatic field influence on electrodeposition of metal films
Thin Solid films V.189, P.247-255. 1990
226 A. L. Danilyuk, V. A. Labunov, V.I. Kurmashev, A.L. Matyushkov.
Magnetostatic Field Influence on Electrodeposition of Cuprum
Proceedings of USSR Academy of Sciences V.311, No.1.- P.139-142. 1990
227 V. E. Borisenko, D. I. Zarovskii, V. V. Tokarev, T. M. Pyatkova.
Argon ion implantation influence on phase formation and structure of nickel silicides
Phys. Stat. Sol. (a) 111(2), 499 505 1989
228 V. E. Borisenko, V. V. Tokarev, T. M. Pyatkova, A. I. Demchenko.
Growth of epitaxial nickel disilicide during rapid thermal processing of argon-implanted nickel films on silicon
Phys. Stat. Sol. (a) 116(1), 331 336 1989
229 V. E. Borisenko, A. B. Filonov, S. Y. Nikitin, A. L. Pushkarchuk.
Electronic property simulation of YBa2Cu3O7 films
Phys. Stat. Sol. (b) 155(1), K127 - K130 1989
230 Characterization of chromium silicides formed by rapid thermal processing No info 1989
231 V. E. Borisenko, L. I. Ivanenko, D. I. Zarovskii, G.V. Litvinovich.
Characterization of chromium silicides formed by rapid thermal processing
Izvestiya vuzov. Physica. N11, p.128-129 (in Russian) 1989
232 A. L. Danilyuk, I.I. Abramov.
Occupancy Model of the Semiconductor Surface Band States Including Correlation Interactions
Surface No.8.- P.17-20 (In Russian). 1989
233 Occupancy Model of the Semiconductor Surface Band States Including Correlation Interactions Surface No.8.- P.17-20 (In Russian). 1989
234 V. E. Borisenko, D. I. Zarovskii, V. V. Tokarev.
Influence of argon implantation on the formation of platinum silicides
Phys. Stat. Sol. (a) 107(1), K33 - K35 1988
235 V. E. Borisenko, S. G. Yudin.
Implanted impurity behavior in silicon subjected to transient heating
Phys. Stat. Sol. (a) 109(1), 395 402 1988
236 V. E. Borisenko, S. G. Yudin.
Steady-state solubility of substitutional impurities in silicon
Phys. Stat. Sol. (a) 101(1), 123 127 1987
237 V. E. Borisenko, V. A. Labunov, A. M. Dorofeev.
High-temperature treatment of porous silicon
Phys. Stat. Sol. (a) 102(1), 193 198 1987
238 V. E. Borisenko, A. G. Dutov, K. E. Lobanova, S. G. Yudin.
Redistribution of phosphorus in implanted laser-annealed silicon during subsequent heat treatment lasting up to tens of seconds
Sov. Phys. Semicond 21(8), 891 892 1987
239 V. E. Borisenko, S. G. Yudin, R. M. Bayazitov, D. A. Konovalov, I. B. Khaibullin.
Precipitation of a supersaturated substitutional solution of phosphorus in silicon due to heat treatment for periods of seconds
Sov. Phys. Semicond 21(8), 917 918 1987
240 A. L. Danilyuk, I.I. Abramov.
Influence of The Electron Properties of the Interface on the Voltage-Current Characteristic of the Stationary Discharge Plasma-Semiconductor Contact
Surface No.7.- P.62-67 (In Russian). 1987
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