Belarusian State University of Informatics and Radioelectronics
Center of Nanoelectronics and Novel Materials & Laboratory of Nanophotonics
Personnel
Research
Publications
Hot news
NANOMEETING
Publications
Search Publications:
Title: Year: Author:
Journal or book:
Results 241 - 260 of about 271 publications

N Title Journal or book Year
241 V. E. Borisenko, V. Parkhutik.
RBS study of transient thermal and anodic oxidation of tantalum films
Phys. Stat. Sol. (a) 93(1), 123 130 1986
242 V. E. Borisenko, V. A. Labunov, A. Nylandsted Larsen, D. I. Zarovskii.
TiSi2 formation during brief heat treatment of titanium films on silicon
Sov. Phys. Tech. Phys 31(5), 599 600 1986
243 V. E. Borisenko, V. A. Labunov.
Diffusion of arsenic through porous silicon as a result of heat treatment by exposure to incoherent light for tens of seconds
Sov. Phys. Semicond 20(5), 586 588 1986
244 Semiconducting properties of chromium disilicide formed by rapid thermal processing No info 1986
245 Stability of phosphorus solid solutions in silicon produced by ion implantation and transient thermal processing No info 1985
246 Electrical properties of phosphorus doped polycrystalline silicon subjected to transient heating No info 1985
247 V. E. Borisenko, D. I. Zarovskii.
Formation of chromium silicides by annealing for times < 1 minute
Sov. Phys. Tech. Phys 30(10), 1188 1985
248 V. E. Borisenko, V. V. Gribkovskii, F. F. Komarov, V. S. Solov'yev, P. I. Gaiduk.
Structure modification in As-ion implanted silicon layers during pulse thermal treatment
Rad. Eff. Lett 87(3), 109 115 1985
249 V. E. Borisenko, L. I. Ivanenko, V. A. Labunov, D. I. Zarovskii, V. V. Tokarev, V. Hitko.
Thin film silicide formation by rapid thermal processing
Sov. J. Foreign. Electron. Techn. V. 291, N8, pp.27-53 (review article) - in Russian 1985
250 A. L. Danilyuk, E.E. Tkharev.
Electron density and potential distribution at a plasma-insulator interface
Vacuum Vol.35, No.4-5. P.183-187. 1985
251 V. E. Borisenko, V. A. Labunov, V. V. Gribkovskii, S. G. Yudin.
Pulsed heating of semiconductors
Phys. Stat. Sol. (a) 86(2), 573 583 1984
252 V. E. Borisenko, A. Nylandsted Larsen.
Behaviour of implanted arsenic in silicon crystals subjected to transient heating with incoherent light
Appl. Phys. A 33(1), 51 58 1984
253 V. E. Borisenko, L. Sarholt-Kristensen, A. Johansen, E. Johnson.
Sputtering on copper single crystals
Nucl. Instr. Meth. Phys. Res. B 230(1-3), 684 688 1984
254 V. E. Borisenko, A. G. Dutov, K. E. Lobanova, V. A. Kolosov.
Radiation-stimulated redistribution of antimony in silicon
Sov. Phys. Semicond 18(10), 1178 1179 1984
255 V. E. Borisenko, D. I. Zarovskii.
Ten-second annealing of implanted silicon by low-energy electrons
Sov. Phys. Semicond 18(10), 1192 1194 1984
256 V. E. Borisenko, L. F. Gorskaya, A. G. Dutov, A. M. Dorofeev.
Redistribution of gold in single-crystal silicon during brief annealing by incoherent light
Sov. Phys. Tech. Phys 29(10), 1184 1186 1984
257 V. E. Borisenko.
Formation of n-type layers in silicon as a result of bombardment with oxygen ions
Sov. Phys. Semicond 17(1), 108 1983
258 V. E. Borisenko, A. Nylandsted Larsen.
Incoherent light induced diffusion of arsenic into silicon from spin-on source
Appl. Phys. Lett 43(6), 582 584 1983
259 V. E. Borisenko, V. A. Labunov, V. V. Gribkovskii, V. A. Samuilov, K. D. Yashin.
Incoherent light annealing of phosphorus doped polycrystalline silicon
Phys. Stat. Sol. (a) 75(1), 117 120 1983
260 V. E. Borisenko, A. M. Dorofeev.
Gettering of impurities by incoherent light annealed porous silicon
Laser Solid Interactions and Transient Thermal Processing of Materials pp. 375 379 1983
<< Previous Page    1    2    3    4    5    6    7    8    9    10    11    12   13    14   Next Page >>
© 2003-2011, Center of Nanoelectronics and Novel Materials & Laboratory of Nanophotonics | web@nano-center.org