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Results 241 - 260 of about 271 publications
| N |
Title |
Journal or book |
Year |
| 241 |
V. E. Borisenko, V. Parkhutik.
RBS study of transient thermal and anodic oxidation of tantalum films |
Phys. Stat. Sol. (a) 93(1), 123 – 130 |
1986 |
| 242 |
V. E. Borisenko, V. A. Labunov, A. Nylandsted Larsen, D. I. Zarovskii.
TiSi2 formation during brief heat treatment of titanium films on silicon |
Sov. Phys. Tech. Phys 31(5), 599 – 600 |
1986 |
| 243 |
V. E. Borisenko, V. A. Labunov.
Diffusion of arsenic through porous silicon as a result of heat treatment by exposure to incoherent light for tens of seconds |
Sov. Phys. Semicond 20(5), 586 – 588 |
1986 |
| 244 |
Semiconducting properties of chromium disilicide formed by rapid thermal processing |
No info |
1986 |
| 245 |
Stability of phosphorus solid solutions in silicon produced by ion implantation and transient thermal processing |
No info |
1985 |
| 246 |
Electrical properties of phosphorus doped polycrystalline silicon subjected to transient heating |
No info |
1985 |
| 247 |
V. E. Borisenko, D. I. Zarovskii.
Formation of chromium silicides by annealing for times < 1 minute |
Sov. Phys. Tech. Phys 30(10), 1188 |
1985 |
| 248 |
V. E. Borisenko, V. V. Gribkovskii, F. F. Komarov, V. S. Solov'yev, P. I. Gaiduk.
Structure modification in As-ion implanted silicon layers during pulse thermal treatment |
Rad. Eff. Lett 87(3), 109 – 115 |
1985 |
| 249 |
V. E. Borisenko, L. I. Ivanenko, V. A. Labunov, D. I. Zarovskii, V. V. Tokarev, V. Hitko.
Thin film silicide formation by rapid thermal processing |
Sov. J. Foreign. Electron. Techn. V. 291, N8, pp.27-53 (review article) - in Russian |
1985 |
| 250 |
A. L. Danilyuk, E.E. Tkharev.
Electron density and potential distribution at a plasma-insulator interface |
Vacuum Vol.35, No.4-5. P.183-187. |
1985 |
| 251 |
V. E. Borisenko, V. A. Labunov, V. V. Gribkovskii, S. G. Yudin.
Pulsed heating of semiconductors |
Phys. Stat. Sol. (a) 86(2), 573 – 583 |
1984 |
| 252 |
V. E. Borisenko, A. Nylandsted Larsen.
Behaviour of implanted arsenic in silicon crystals subjected to transient heating with incoherent light |
Appl. Phys. A 33(1), 51 – 58 |
1984 |
| 253 |
V. E. Borisenko, L. Sarholt-Kristensen, A. Johansen, E. Johnson.
Sputtering on copper single crystals |
Nucl. Instr. Meth. Phys. Res. B 230(1-3), 684 – 688 |
1984 |
| 254 |
V. E. Borisenko, A. G. Dutov, K. E. Lobanova, V. A. Kolosov.
Radiation-stimulated redistribution of antimony in silicon |
Sov. Phys. Semicond 18(10), 1178 – 1179 |
1984 |
| 255 |
V. E. Borisenko, D. I. Zarovskii.
Ten-second annealing of implanted silicon by low-energy electrons |
Sov. Phys. Semicond 18(10), 1192 – 1194 |
1984 |
| 256 |
V. E. Borisenko, L. F. Gorskaya, A. G. Dutov, A. M. Dorofeev.
Redistribution of gold in single-crystal silicon during brief annealing by incoherent light |
Sov. Phys. Tech. Phys 29(10), 1184 – 1186 |
1984 |
| 257 |
V. E. Borisenko.
Formation of n-type layers in silicon as a result of bombardment with oxygen ions |
Sov. Phys. Semicond 17(1), 108 |
1983 |
| 258 |
V. E. Borisenko, A. Nylandsted Larsen.
Incoherent light induced diffusion of arsenic into silicon from spin-on source |
Appl. Phys. Lett 43(6), 582 – 584 |
1983 |
| 259 |
V. E. Borisenko, V. A. Labunov, V. V. Gribkovskii, V. A. Samuilov, K. D. Yashin.
Incoherent light annealing of phosphorus doped polycrystalline silicon |
Phys. Stat. Sol. (a) 75(1), 117 – 120 |
1983 |
| 260 |
V. E. Borisenko, A. M. Dorofeev.
Gettering of impurities by incoherent light annealed porous silicon |
Laser Solid Interactions and Transient Thermal Processing of Materials pp. 375 – 379 |
1983 |
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