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Results 261 - 271 of about 271 publications
| N |
Title |
Journal or book |
Year |
| 261 |
An experimental investigation of ion implantation combined with laser and incoherent-light annealing, and of laser-induced diffusion for the production of solar cells |
No info |
1983 |
| 262 |
V. E. Borisenko, A. Nylandsted Larsen, L. D. Nielsen.
Incoherent-light annealing of phosphorus implanted silicon, with solar cell production in view |
J. Phys C5/381 - C5/385 |
1983 |
| 263 |
V. E. Borisenko, A. Nylandsted Larsen, L. D. Nielsen.
Doping of silicon with arsenic and phosphorus from spin-on sources exposed to incoherent light |
J. Phys 44(10), C5/427 - C5/431 |
1983 |
| 264 |
V. E. Borisenko, V. A. Didik, R. Sh. Malkovich.
Diffusion of gold into silicon during bombardment by low-energy ions |
Sov. Phys. Tech. Phys 27(1), 115 – 117 |
1982 |
| 265 |
V. E. Borisenko, L. F. Gorskaya, A. G. Dutov, K. E. Lobanova.
Stimulation of the diffusion of phosphorus and antimony in silicon by bombardment with oxygen ions |
Sov. Phys. Semicond 16(5), 584 – 585 |
1982 |
| 266 |
V. E. Borisenko, V. A. Labunov.
Pulse electron beam annealing of phosphorus implanted silicon |
Laser and Electron Beam Interactions with Solids pp. 305 – 310 |
1982 |
| 267 |
V. E. Borisenko, V. A. Labunov.
Annealing of antimony implanted silicon with a halogen lamp irradiation |
Phys. Stat. Sol. (a) 72(2), K173 - K176 |
1982 |
| 268 |
V. E. Borisenko, V. A. Labunov, L. D. Buiko, V. A. Ukhov.
Influence of oxygen on radiation-stimulated diffusion of phosphorus in silicon |
Sov. Phys. Semicond 15(1), 1 – 3 |
1981 |
| 269 |
V. E. Borisenko, V. A. Labunov.
Influence of radiation-stimulated diffusion on the sputtering of silicon by low-energy ions |
Sov. Phys. Semicond 15(7), 816 – 817 |
1981 |
| 270 |
V. E. Borisenko, V. A. Labunov.
Diffusion of phosphorus in silicon stimulated by low-energy plasma-ion treatment |
Sov. Phys. Semicond 13(3), 355 – 356 |
1979 |
| 271 |
V. E. Borisenko, V. A. Labunov.
Temperature dependence of sputtering coefficient of silicon |
Sov. Phys. Solid State 20(4), 712 |
1978 |
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