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Results 261 - 271 of about 271 publications

N Title Journal or book Year
261 An experimental investigation of ion implantation combined with laser and incoherent-light annealing, and of laser-induced diffusion for the production of solar cells No info 1983
262 V. E. Borisenko, A. Nylandsted Larsen, L. D. Nielsen.
Incoherent-light annealing of phosphorus implanted silicon, with solar cell production in view
J. Phys C5/381 - C5/385 1983
263 V. E. Borisenko, A. Nylandsted Larsen, L. D. Nielsen.
Doping of silicon with arsenic and phosphorus from spin-on sources exposed to incoherent light
J. Phys 44(10), C5/427 - C5/431 1983
264 V. E. Borisenko, V. A. Didik, R. Sh. Malkovich.
Diffusion of gold into silicon during bombardment by low-energy ions
Sov. Phys. Tech. Phys 27(1), 115 117 1982
265 V. E. Borisenko, L. F. Gorskaya, A. G. Dutov, K. E. Lobanova.
Stimulation of the diffusion of phosphorus and antimony in silicon by bombardment with oxygen ions
Sov. Phys. Semicond 16(5), 584 585 1982
266 V. E. Borisenko, V. A. Labunov.
Pulse electron beam annealing of phosphorus implanted silicon
Laser and Electron Beam Interactions with Solids pp. 305 310 1982
267 V. E. Borisenko, V. A. Labunov.
Annealing of antimony implanted silicon with a halogen lamp irradiation
Phys. Stat. Sol. (a) 72(2), K173 - K176 1982
268 V. E. Borisenko, V. A. Labunov, L. D. Buiko, V. A. Ukhov.
Influence of oxygen on radiation-stimulated diffusion of phosphorus in silicon
Sov. Phys. Semicond 15(1), 1 3 1981
269 V. E. Borisenko, V. A. Labunov.
Influence of radiation-stimulated diffusion on the sputtering of silicon by low-energy ions
Sov. Phys. Semicond 15(7), 816 817 1981
270 V. E. Borisenko, V. A. Labunov.
Diffusion of phosphorus in silicon stimulated by low-energy plasma-ion treatment
Sov. Phys. Semicond 13(3), 355 356 1979
271 V. E. Borisenko, V. A. Labunov.
Temperature dependence of sputtering coefficient of silicon
Sov. Phys. Solid State 20(4), 712 1978
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