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Results 61 - 80 of about 271 publications

N Title Journal or book Year
61 V. E. Borisenko, S. V. Gaponenko, V.S. Gurin.
Physics, Chemistry and Application of Nanostructures
Book World Scientific, Singapore 2003
62 V. E. Borisenko, A. A. Leshok, S. K. Lazarouk, P. Jaguiro.
Reverse biased porous silicon light emitting diodes for optical intra chip interconnects
Physica E 16, 495-498 2003
63 V. E. Borisenko, V. L. Shaposhnikov, D. B. Migas, L. Miglio.
Comparative study of structural, electronic and optical properties of Ca2Si, Ca2Ge, Ca2Sn, and Ca2Pb
Phys. Rev. B 67(20), 205203 (7 pages) 2003
64 V. E. Borisenko.
Carrier transport and light emission in silicon quantum well structures
Frontiers in Molecular Scale Technology of Nanocarbon, Nanosiliconand Biopolymer Integrated Nanosystems p.47 2003
65 V. E. Borisenko, A. L. Danilyuk, J. A. Berashevich, A. N. Kholod.
Carrier transport and related phenomena in nanosize periodic silicon/insulator structures
Materials Science and Engineering B101(1), 111-118 2003
66 V. E. Borisenko, A. L. Danilyuk, J. A. Berashevich.
Digital devices based on tunnel resonant transport of charge carriers in periodic Si/CaF2 nanostructures
Materials Science and Engineering B101(1), 300-304 2003
67 V. E. Borisenko, V. L. Shaposhnikov, A. V. Krivosheeva.
Electronic structure of stressed CrSi2
Materials Science and Engineering B101(1), 309-312 2003
68 V. E. Borisenko, A. B. Filonov, L. I. Ivanenko, V. L. Shaposhnikov, G. Behr, J. Schumann, H. Vinzelberg, D. Souptel, A. Plotnikov.
Transport properties of Mn-doped Ru2Si3
Microelectronic Engineering 70(2-4), 209-214 2003
69 V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, A. E. Krivosheev, A. V. Krivosheeva.
Effect of lattice deformation on semiconducting properties of CrSi2
Semiconductors 37, No. 4, pp. 384389 2003
70 A. V. Krivosheeva, A. A. Stekolnikov, F. Bechstedt, J. Furthmüller.
Vibrational properties of the quasi-one-dimensional In/Si(111)-(4x1) system
Phys. Rev. B 68, 193406 (1-4) 2003
71 A. V. Krivosheeva.
(4
Proceedings of the Belorussian Engineering Academy 1(15)/4, pp.39-40 - in Russian 2003
72 V. E. Borisenko, A. L. Danilyuk, J. A. Berashevich, A. V. Korolev.
Memory Element Based on Si/CaF2 Periodic Nanostructures
Technical Physics Vol. 48 No. 1, pp. 63-67 2003
73 V. E. Borisenko, S. Paschen, D. Souptel, H. Vinzelberg, J. Schumann, G. Behr, A. E. Krivosheev, L. I. Ivanenko, A. B. Filonov, A. Bentien.
Thermoelectric properties of Mn-doped Ru2Si3
Proceedings of International Conference on Thermoelectrics pp.157-160 2003
74 L. I. Ivanenko, V. L. Shaposhnikov, E. A. Krushevski.
Lattice matching between bulk Ru2Si3 and nanocrystalline RuSi2
Physics, Chemistry and Application of Nanostructures pp. 306 309 2003
75 Compressive plasma flows interaction with steel surface: structure and mechanical properties of modified layer Vacuum Vol.70, No.2-3. - P.269-274 2003
76 The effect of Ti ions implantation of the structure of anodic alumina films Nucl. Instr. Meth. Phys. Res. B ol. 211, No. 2. - P.219-226 2003
77 V. E. Borisenko, J. A. Berashevich, N.V. Grib.
Possibilities of application of DNA molecule as a switching element
Doklady BSUIR , 1(2), P. 20-28, (in Russian) 2003
78 V. E. Borisenko, J. A. Berashevich, N.V. Grib.
Switching elements on the basis of DNA molecule
Proceedings of the Belorussian Engineering Academy , 1(15)/4, P. 98-100, (in Russian) 2003
79 N. V. Gaponenko, I. S. Molchan, A. V. Mudryi, S. V. Gaponenko, J. Misiewicz, R. Kudrawiec.
Luminescence of the Eu and Tb ions from the structure microporous xerogel/mesoporous anodic alumina
J. Appl. Spectroscopy V. 70, 1. P. 5761 2003
80 N. V. Gaponenko, I. S. Molchan, G. E. Thompson, V. Lambertini, P. Repetto.
J. SID Vol. 11, N 1. P. 2732 2003
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