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Results 81 - 100 of about 271 publications

N Title Journal or book Year
81 N. V. Gaponenko.
Sol-gel derived films in mesoporous matrices
Belaruskaja Navuka Minsk. 136 p. in Russian 2003
82 D. A. Podryabinkin, A. L. Danilyuk, V. E. Borisenko.
Model and Logic Elements for Quantum Calculation on Spin Systems in Resonance Fields
Electromagnetic waves and electronic systems V.7-3. - pp. 67-72. (in Russian) 2002
83 D. A. Podryabinkin.
Logic elements for quantum calculations.
Materials X republic conferences 'Physics of the condensed condition' Grodno, Belarus 2002.- pp. 261-262 (in Russian) 2002
84 D. A. Podryabinkin, A. L. Danilyuk.
Synchronization of fluctuations connected two-level spin system in a resonant field for quantum calculations
Proceedings of the Belorussian Engineering Academy 2002, 2(14)/2, pp.75-77. (in Russian) 2002
85 O. V. Sergeev, R. Kudrawiec, L. Bryja, J. Misiewicz, G. E. Thompson, P. Skeldon, B. Hamilton, J. C. Pivin, E. A. Stepanova, I. S. Molchan, N. V. Gaponenko, A. Pakes.
Enhancement of green terbium-related photoluminescence from highly doped microporous alumina xerogels in mesoporous anodic alumina
J. Electrochem. Soc Vol. 149, 2. P. H49H52 2002
86 N. V. Gaponenko, I. S. Molchan, P. Skeldon, G. E. Thompson, J. Misiewicz, L. Bryja, R. Kudrawiec, A. Pakes.
Photoluminescence of Eu-doped titania xerogel spin-on deposited on porous anodic alumina
Sensors and Actuators A Vol. 99. P. 7173 2002
87 N. V. Gaponenko, I. S. Molchan, J. C. Pivin, P. Skeldon, G. E. Thompson, J. Misiewicz, L. Bryja, R. Kudrawiec.
Comparison of terbium photoluminescence from ion implanted and sol
J. Alloys Comp Vol. 341. P. 272274 2002
88 N. V. Gaponenko, I. S. Molchan, J. Misiewicz, L. Bryja, R. Kudrawiec.
Photoluminescence investigation of porous anodic alumina with spin-on europium-containing titania sol-gel films
J. Alloys Comp Vol. 341. P. 211213 2002
89 N. V. Gaponenko, I. S. Molchan, P. Skeldon, G. E. Thompson, J. Misiewicz, L. Bryja, R. Kudrawiec.
Visible luminescence from europium-doped alumina sol-gel- derived films confined in porous anodic alumina
J. Alloys Comp Vol. 341. P. 251254 2002
90 V. E. Borisenko, L. I. Ivanenko, G. Behr, C. R. Spinella.
RuSi2: evidence of a new binary phase in the ruthenium
J. Cryst. Growth 236, 572-576 2002
91 V. E. Borisenko, J. A. Berashevich, B. V. Kamenev.
Injection excitation of luminescence in multilayer nc-Si/insulator structures
Semiconductors 36(2), 213-218 2002
92 V. E. Borisenko, A. L. Danilyuk.
Model and logic gates for quantum computing with a two level system in a resonant frequency field
Russian Microelectronics 31(2), 116-121 2002
93 V. E. Borisenko, V. L. Shaposhnikov, A. E. Krivosheev, A. V. Krivosheeva, A. N. Kholod.
Band structure of Mg2Si and Mg2Ge semiconducting compound with a strained crystal lattice
Semiconductors 36(5), 496-500 2002
94 V. E. Borisenko, A. L. Danilyuk, J. A. Berashevich.
Resonance transfer of charge carriers in Si/CaF2 periodic nanostructures via trap states in insulator layers
Semiconductors 36(6), 679-684 2002
95 V. E. Borisenko, V. L. Shaposhnikov, D. B. Migas, L. Miglio.
Structural, electronic and optical properties of Ru2Si3, Ru2Ge3, Os2Si3 and Os2Ge3
Phys. Stat. Sol. (b) 231(1), 171-180 2002
96 V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, A. E. Krivosheev, A. V. Krivosheeva.
Effect of stresses in electronic properties of chromium disilicide
Microelectronic Engineering 64(1), 219-223 2002
97 V. E. Borisenko, A. B. Filonov, L. I. Ivanenko, V. L. Shaposhnikov, D. B. Migas, G. Behr, J. Schumann, H. Vinzelberg.
Transport properties of semiconducting rhenium silicide
Microelectronic Engineering 64(1), 225-232 2002
98 A. E. Krivosheev, A. V. Krivosheeva.
Influence of a uniaxial deformation on optical properties of semiconducting chromium disilicide
Materials X republic conferences 'Physics of the condensed condition' (Grodno, Belarus), pp.176-177 - in Russian. 2002
99 A. L. Danilyuk, A. V. Korolev.
Universal quantum gate based on silicon/insulator structure
Proceedings of the Belorussian Engineering Academy 2 (14)/2, pp. 72-74 (in Russian). 2002
100 L. I. Ivanenko, G. Behr, J. Schumann, H. Vinzelberg, D. Souptel.
Floating zone growth and characterization of semiconducting Ru2Si3 single crystals
J. Cryst. Growth 244 p. 296-304 2002
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