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Results 81 - 100 of about 271 publications
| N |
Title |
Journal or book |
Year |
| 81 |
N. V. Gaponenko.
Sol-gel derived films in mesoporous matrices |
Belaruskaja Navuka Minsk. 136 p. – in Russian |
2003 |
| 82 |
D. A. Podryabinkin, A. L. Danilyuk, V. E. Borisenko.
Model and Logic Elements for Quantum Calculation on Spin Systems in Resonance Fields |
Electromagnetic waves and electronic systems V.7-3. - pp. 67-72. (in Russian) |
2002 |
| 83 |
D. A. Podryabinkin.
Logic elements for quantum calculations. |
Materials X republic conferences 'Physics of the condensed condition' Grodno, Belarus 2002.- pp. 261-262 (in Russian) |
2002 |
| 84 |
D. A. Podryabinkin, A. L. Danilyuk.
Synchronization of fluctuations connected two-level spin system in a resonant field for quantum calculations |
Proceedings of the Belorussian Engineering Academy 2002, 2(14)/2, pp.75-77. (in Russian) |
2002 |
| 85 |
O. V. Sergeev, R. Kudrawiec, L. Bryja, J. Misiewicz, G. E. Thompson, P. Skeldon, B. Hamilton, J. C. Pivin, E. A. Stepanova, I. S. Molchan, N. V. Gaponenko, A. Pakes.
Enhancement of green terbium-related photoluminescence from highly doped microporous alumina xerogels in mesoporous anodic alumina |
J. Electrochem. Soc Vol. 149, ¹ 2. – P. H49–H52 |
2002 |
| 86 |
N. V. Gaponenko, I. S. Molchan, P. Skeldon, G. E. Thompson, J. Misiewicz, L. Bryja, R. Kudrawiec, A. Pakes.
Photoluminescence of Eu-doped titania xerogel spin-on deposited on porous anodic alumina |
Sensors and Actuators A Vol. 99. – P. 71–73 |
2002 |
| 87 |
N. V. Gaponenko, I. S. Molchan, J. C. Pivin, P. Skeldon, G. E. Thompson, J. Misiewicz, L. Bryja, R. Kudrawiec.
Comparison of terbium photoluminescence from ion implanted and sol |
J. Alloys Comp Vol. 341. – P. 272–274 |
2002 |
| 88 |
N. V. Gaponenko, I. S. Molchan, J. Misiewicz, L. Bryja, R. Kudrawiec.
Photoluminescence investigation of porous anodic alumina with spin-on europium-containing titania sol-gel films |
J. Alloys Comp Vol. 341. – P. 211–213 |
2002 |
| 89 |
N. V. Gaponenko, I. S. Molchan, P. Skeldon, G. E. Thompson, J. Misiewicz, L. Bryja, R. Kudrawiec.
Visible luminescence from europium-doped alumina sol-gel- derived films confined in porous anodic alumina |
J. Alloys Comp Vol. 341. – P. 251–254 |
2002 |
| 90 |
V. E. Borisenko, L. I. Ivanenko, G. Behr, C. R. Spinella.
RuSi2: evidence of a new binary phase in the ruthenium |
J. Cryst. Growth 236, 572-576 |
2002 |
| 91 |
V. E. Borisenko, J. A. Berashevich, B. V. Kamenev.
Injection excitation of luminescence in multilayer nc-Si/insulator structures |
Semiconductors 36(2), 213-218 |
2002 |
| 92 |
V. E. Borisenko, A. L. Danilyuk.
Model and logic gates for quantum computing with a two level system in a resonant frequency field |
Russian Microelectronics 31(2), 116-121 |
2002 |
| 93 |
V. E. Borisenko, V. L. Shaposhnikov, A. E. Krivosheev, A. V. Krivosheeva, A. N. Kholod.
Band structure of Mg2Si and Mg2Ge semiconducting compound with a strained crystal lattice |
Semiconductors 36(5), 496-500 |
2002 |
| 94 |
V. E. Borisenko, A. L. Danilyuk, J. A. Berashevich.
Resonance transfer of charge carriers in Si/CaF2 periodic nanostructures via trap states in insulator layers |
Semiconductors 36(6), 679-684 |
2002 |
| 95 |
V. E. Borisenko, V. L. Shaposhnikov, D. B. Migas, L. Miglio.
Structural, electronic and optical properties of Ru2Si3, Ru2Ge3, Os2Si3 and Os2Ge3 |
Phys. Stat. Sol. (b) 231(1), 171-180 |
2002 |
| 96 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, A. E. Krivosheev, A. V. Krivosheeva.
Effect of stresses in electronic properties of chromium disilicide |
Microelectronic Engineering 64(1), 219-223 |
2002 |
| 97 |
V. E. Borisenko, A. B. Filonov, L. I. Ivanenko, V. L. Shaposhnikov, D. B. Migas, G. Behr, J. Schumann, H. Vinzelberg.
Transport properties of semiconducting rhenium silicide |
Microelectronic Engineering 64(1), 225-232 |
2002 |
| 98 |
A. E. Krivosheev, A. V. Krivosheeva.
Influence of a uniaxial deformation on optical properties of semiconducting chromium disilicide |
Materials X republic conferences 'Physics of the condensed condition' (Grodno, Belarus), pp.176-177 - in Russian. |
2002 |
| 99 |
A. L. Danilyuk, A. V. Korolev.
Universal quantum gate based on silicon/insulator structure |
Proceedings of the Belorussian Engineering Academy ¹ 2 (14)/2, pp. 72-74 (in Russian). |
2002 |
| 100 |
L. I. Ivanenko, G. Behr, J. Schumann, H. Vinzelberg, D. Souptel.
Floating zone growth and characterization of semiconducting Ru2Si3 single crystals |
J. Cryst. Growth 244 p. 296-304 |
2002 |
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