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Results 121 - 140 of about 271 publications
| N |
Title |
Journal or book |
Year |
| 121 |
V. E. Borisenko, L. I. Ivanenko, V. L. Shaposhnikov, D. B. Migas, D. Lenssen, R. Crius, S. Mantl.
Optical properties of semiconducting Ru2Si3 |
Optical Material 17(1), 339-341 |
2001 |
| 122 |
V. E. Borisenko, A. L. Danilyuk, J. A. Berashevich, A. N. Kholod, F. Arnaud d.
Charge effects and related transport phenomena in nanosize silicon/insulator structures |
Microelectronics, Microsystems and Nanotechnology pp. 33 – 36 |
2001 |
| 123 |
V. E. Borisenko, S. K. Lazarouk, P. Jaguiro.
Avalanche porous silicon light emitting diodes for optical intra chip interconnects |
Microelectronics, Microsystems and Nanotechnology pp. 41 – 44 |
2001 |
| 124 |
V. L. Shaposhnikov, A. E. Krivosheev, A. V. Krivosheeva.
Changes in band structure of chromium disilicide under influence of isotropic and uniaxial deformations of its lattice |
Proceedings of the Belorussian Engineering Academy ¹1(11)/3, pp.55-57 - in Russian |
2001 |
| 125 |
L. I. Ivanenko, A. Heinrich, G. Behr, H. Vinzelberg.
Single crystal growth of non-stoichiometric ß-FeSi2 by chemical transport reaction |
Thin Solid films 381 (2001) Nr. 2, p. 276-281 |
2001 |
| 126 |
L. I. Ivanenko, A. Heinrich, G. Behr, H. Griessmann, J. Schumann, H. Vinzelberg.
Thermoelectric properties of ß-FeSi2 single crystals and polycrystalline ß-FeSi2+x thin films |
Thin Solid films 38 Nr. 2, p. 287-295 |
2001 |
| 127 |
Evolution of microstructure of instrumental AISI M2 steel after plasma immersion nitrogen and carbon implantation |
Surface and Coatings Technology V.136, No.1-3.- P.226-230 |
2001 |
| 128 |
Cleaning and Doping of Silicon in a BF3 Plasma during Fabrication of Ohmic Contacts |
Russian Microelectronics Vol. 30, No. 4, p. 261-266 |
2001 |
| 129 |
Formation of Submicron Cylindrical Structures at Silicon Surface Exposed to a Compressional Plasma Flow |
JETP Letters Vol. 74, No. 4, P. 213–215 |
2001 |
| 130 |
Plasma immersion N and N+C implantation into high-speed tool steel: surface morphology, phase composition and mechanical properties |
Surface and Coatings Technology Vol. 142-144, P. 406-411 |
2001 |
| 131 |
Charge effects controlling hysteresis of current and negative differential resistance in periodical nanosize Si/CaF2 structures |
Semiconductors V.36, No. 1. - P. 85-90 |
2001 |
| 132 |
A. V. Korolev, I.I. Abramov.
Device Structures Based on Resonant Tunneling diodes: A Theoretical Consideration |
Technical Physics Vol.46, N9, p.1190-1195 |
2001 |
| 133 |
Semiconducting Silicides |
Electromagnetic waves and electronic systems |
2000 |
| 134 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, D. B. Migas, A. Heinrich.
Narrow-gap semiconducting silicides: the band structure |
Microelectronic Engineering 50(1-4), 249 – 255 |
2000 |
| 135 |
Thermoelectric properties of b-FeSi2 single crystals and polycrystalline b-FeSi2+x thin films |
No info |
2000 |
| 136 |
Single crystals growth of non-stoichiometric b-FeSi2 by chemical transport reaction |
No info |
2000 |
| 137 |
Optical properties of semiconducting Ru2Si3 |
No info |
2000 |
| 138 |
N. V. Gaponenko, J. C. Pivin, B. Hamilton, J. A. Davidson, P. Skeldon, G. E. Thompson, X. Zhou.
Strongly enhanced Tb luminescence from titania xerogel solids mesoscopically confined in porous anodic alumina |
Appl. Phys. Lett Vol. 76, ¹ 8. – P. 1006–1008 |
2000 |
| 139 |
Visible luminescence from europium-doped alumina sol-gel- derived films confined in porous anodic alumina |
J. Alloys Comp Vol. 341. – P. 251–254 |
2000 |
| 140 |
V. E. Borisenko.
Semiconducting Silicides |
Book Springer, Berlin |
2000 |
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