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Results 141 - 160 of about 271 publications
| N |
Title |
Journal or book |
Year |
| 141 |
V. E. Borisenko, A. N. Kholod, F. Bassani, F. Arnaud d, S. Ménard, M. Liniger.
Vertical electrical transport in Si/CaF2 nanocrystalline heterostructures |
Mater. Sci. Eng. B 69-70, 464 – 467 |
2000 |
| 142 |
V. E. Borisenko, A. A. Leshok, S. K. Lazarouk, C. Mazzoleni, L. Pavesi.
On the route to Si based interconnects |
Microelectronic Engineering 50(1-4), 81 – 86 |
2000 |
| 143 |
V. E. Borisenko, A. N. Kholod, F. Arnaud d, A. Saúl, J. Fuhr.
Electronic properties of germanium quantum films |
Phys. Rev. B 62(19), 12949 - 12954 |
2000 |
| 144 |
V. E. Borisenko, A. N. Kholod, F. Bassani, F. Arnaud d, S. Ménard, M. Liniger.
Charge carrier transport in Si/CaF2 heterostructures controlled by forming bias |
Phys. Stat. Sol. (a) 181(2), 561 - 568 |
2000 |
| 145 |
V. E. Borisenko.
Fundamental electronic properties of semiconducting silicides |
Silicides. Fundamentals and Applications pp. 108 – 125 |
2000 |
| 146 |
A. E. Krivosheev, A. V. Krivosheeva.
Influence of a crystal lattice strains on band structure of semiconducting compounds |
Proceedings of the Belorussian Engineering Academy ¹1(9)/2, pp.37-39 - in Russian. |
2000 |
| 147 |
Structural and Phase composition changes in aluminium induced by carbon implantation |
Surface and Coatings Technology Vol.128-129. - P.358-363 |
2000 |
| 148 |
Physics, Chemistry and Application of Nanostructures |
No info |
1999 |
| 149 |
V. E. Borisenko, A. N. Kholod, F. Bassani, F. Arnaud d, S. Ménard, M. Liniger.
Room temperature negative differential resistance in Si/CaF2 quantum wells |
Physics, Chemistry and Application of Nanostructures pp. 23 – 27 |
1999 |
| 150 |
V. E. Borisenko, A. A. Leshok, S. K. Lazarouk, P. Jaguiro.
Porous silicon light emitting diode and photodetector integrated with a multilayer alumina waveguide |
Physics, Chemistry and Application of Nanostructures pp. 370 – 374 |
1999 |
| 151 |
V. E. Borisenko, A. B. Filonov, W. Henrion, H. Lange.
Electronic and optical properties of semiconducting iron disilicide |
J. Luminescence 80, 479 – 484 |
1999 |
| 152 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, H. Lange, A. Heinrich.
Electronic properties of semiconducting rhenium silicide |
Europhys. Lett 46(3), 376 – 381 |
1999 |
| 153 |
V. E. Borisenko, A. L. Danilyuk, A. N. Kholod, F. Bassani, F. Arnaud d, S. Ménard.
Electroluminescence simulation of multiquantum well silicon structures |
J. Appl. Phys 85(10), 7219 – 7223 |
1999 |
| 154 |
V. E. Borisenko, A. N. Kholod, F. Arnaud d, A. Zaslavsky.
Current oscillations in semiconductor-insulator multiple quantum wells |
Phys. Rev. B 60(23), 15975 – 15979 |
1999 |
| 155 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, H. Lange, A. Heinrich.
Electronic properties of isostructural ruthenium and osmium silicides and germanides |
Phys. Rev. B 60(24), 16494 – 16498 |
1999 |
| 156 |
Formation of complex Al-N-C layer in aluminium by successive carbon and nitrogen implantation |
Nucl. Instr. Meth. Phys. Res. B Vol. B-147, p. 332-336 |
1999 |
| 157 |
N. V. Gaponenko, M. Stepikhova, L. Palmetshofer, W. Jantsch, H. J. von Bardeleben.
1,5 m infrared photoluminescence phenomena in Er-doped porous silicon |
Appl. Phys. Lett Vol. 74, ¹ 4. –P. 537–539 |
1999 |
| 158 |
O. V. Sergeev, W. Jantsch, L. Palmetshofer, M. Stepikhova, J. C. Pivin, A. S. Baran, A. I. Rat, A. V. Mudryi, N. V. Gaponenko, B. Hamilton.
On the origin of 1.5 m luminescence in porous silicon coated with sol-gel derived erbium doped Fe2O3 films |
J. Luminescence Vol. 80, ¹ 1–4. – P. 399–403 |
1999 |
| 159 |
N. V. Gaponenko, S. V. Gaponenko, A. M. Kapitonov, A. Eychmuller, A. L. Rogach.
Self-Organization of Uniform Silica Globules into the Three-Dimensional Superlattice of Artificial Opals |
Mater. Sci. Eng. B Vol. 64. – P. 64–67 |
1999 |
| 160 |
V. E. Borisenko, A. B. Filonov, S. V. Gaponenko, V.S. Gurin.
Physics, Chemistry and Application of Nanostructures |
Book World Scientific, Singapore |
1999 |
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