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Results 141 - 160 of about 271 publications

N Title Journal or book Year
141 V. E. Borisenko, A. N. Kholod, F. Bassani, F. Arnaud d, S. Ménard, M. Liniger.
Vertical electrical transport in Si/CaF2 nanocrystalline heterostructures
Mater. Sci. Eng. B 69-70, 464 467 2000
142 V. E. Borisenko, A. A. Leshok, S. K. Lazarouk, C. Mazzoleni, L. Pavesi.
On the route to Si based interconnects
Microelectronic Engineering 50(1-4), 81 86 2000
143 V. E. Borisenko, A. N. Kholod, F. Arnaud d, A. Saúl, J. Fuhr.
Electronic properties of germanium quantum films
Phys. Rev. B 62(19), 12949 - 12954 2000
144 V. E. Borisenko, A. N. Kholod, F. Bassani, F. Arnaud d, S. Ménard, M. Liniger.
Charge carrier transport in Si/CaF2 heterostructures controlled by forming bias
Phys. Stat. Sol. (a) 181(2), 561 - 568 2000
145 V. E. Borisenko.
Fundamental electronic properties of semiconducting silicides
Silicides. Fundamentals and Applications pp. 108 125 2000
146 A. E. Krivosheev, A. V. Krivosheeva.
Influence of a crystal lattice strains on band structure of semiconducting compounds
Proceedings of the Belorussian Engineering Academy 1(9)/2, pp.37-39 - in Russian. 2000
147 Structural and Phase composition changes in aluminium induced by carbon implantation Surface and Coatings Technology Vol.128-129. - P.358-363 2000
148 Physics, Chemistry and Application of Nanostructures No info 1999
149 V. E. Borisenko, A. N. Kholod, F. Bassani, F. Arnaud d, S. Ménard, M. Liniger.
Room temperature negative differential resistance in Si/CaF2 quantum wells
Physics, Chemistry and Application of Nanostructures pp. 23 27 1999
150 V. E. Borisenko, A. A. Leshok, S. K. Lazarouk, P. Jaguiro.
Porous silicon light emitting diode and photodetector integrated with a multilayer alumina waveguide
Physics, Chemistry and Application of Nanostructures pp. 370 374 1999
151 V. E. Borisenko, A. B. Filonov, W. Henrion, H. Lange.
Electronic and optical properties of semiconducting iron disilicide
J. Luminescence 80, 479 484 1999
152 V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, H. Lange, A. Heinrich.
Electronic properties of semiconducting rhenium silicide
Europhys. Lett 46(3), 376 381 1999
153 V. E. Borisenko, A. L. Danilyuk, A. N. Kholod, F. Bassani, F. Arnaud d, S. Ménard.
Electroluminescence simulation of multiquantum well silicon structures
J. Appl. Phys 85(10), 7219 7223 1999
154 V. E. Borisenko, A. N. Kholod, F. Arnaud d, A. Zaslavsky.
Current oscillations in semiconductor-insulator multiple quantum wells
Phys. Rev. B 60(23), 15975 15979 1999
155 V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, H. Lange, A. Heinrich.
Electronic properties of isostructural ruthenium and osmium silicides and germanides
Phys. Rev. B 60(24), 16494 16498 1999
156 Formation of complex Al-N-C layer in aluminium by successive carbon and nitrogen implantation Nucl. Instr. Meth. Phys. Res. B Vol. B-147, p. 332-336 1999
157 N. V. Gaponenko, M. Stepikhova, L. Palmetshofer, W. Jantsch, H. J. von Bardeleben.
1,5 m infrared photoluminescence phenomena in Er-doped porous silicon
Appl. Phys. Lett Vol. 74, 4. P. 537539 1999
158 O. V. Sergeev, W. Jantsch, L. Palmetshofer, M. Stepikhova, J. C. Pivin, A. S. Baran, A. I. Rat, A. V. Mudryi, N. V. Gaponenko, B. Hamilton.
On the origin of 1.5 m luminescence in porous silicon coated with sol-gel derived erbium doped Fe2O3 films
J. Luminescence Vol. 80, 14. P. 399403 1999
159 N. V. Gaponenko, S. V. Gaponenko, A. M. Kapitonov, A. Eychmuller, A. L. Rogach.
Self-Organization of Uniform Silica Globules into the Three-Dimensional Superlattice of Artificial Opals
Mater. Sci. Eng. B Vol. 64. P. 6467 1999
160 V. E. Borisenko, A. B. Filonov, S. V. Gaponenko, V.S. Gurin.
Physics, Chemistry and Application of Nanostructures
Book World Scientific, Singapore 1999
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