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Results 161 - 180 of about 271 publications
| N |
Title |
Journal or book |
Year |
| 161 |
L. I. Ivanenko, V. L. Shaposhnikov, A. Heinrich, G. Behr, H. Griessmann, J. Schumann, C. Kleint.
Thermoelectric properties of rhenium disilicide |
Proceedings of Eighteenth International Conference on Thermoelectrics 161-164 |
1999 |
| 162 |
L. I. Ivanenko, A. Heinrich, G. Behr, H. Griessmann, J. Schumann, H. Vinzelberg, C. Kleint, D. Hofmann, D. Schlaefer.
Thermoelectric transport properties of ReSi1.75 thin films |
Thermoelectric Materials 1998 545, 165-170 |
1999 |
| 163 |
V. E. Borisenko, A. B. Filonov, A. L. Pushkarchuk, A. N. Kholod, F. Bassani, V. M. Zelenkovskii, F. Arnaud d.
Oxygen effect in optical properties of nanosize silicon clusters |
Phys. Rev. B 57(3), 1394 – 1397 |
1998 |
| 164 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, D. B. Migas, W. Henrion, H. Lange, G. Behr, M. Rebien, P. Stauss.
Theoretical and experimental study of interband optical transitions in semiconducting iron disilicide |
J. Appl. Phys 83(8), 4410 – 4414 |
1998 |
| 165 |
V. E. Borisenko, A. B. Filonov, A. N. Kholod, F. Bassani, F. Arnaud d, A. Saúl.
Grain effect in electronic properties of silicon epitaxial nanostructures |
Comp. Mat. Sci 10(1-4), 148 – 153 |
1998 |
| 166 |
V. E. Borisenko, A. L. Danilyuk, A. N. Kholod.
Electroluminescence from nanometer-sized layered silicon structures |
Russian Microelectronics 27(4), 233 – 239 |
1998 |
| 167 |
V. E. Borisenko, S. K. Lazarouk, A. V. Mudryi.
Room-temperature formation of erbium-related centers in anodic alumina |
Appl. Phys. Lett 73(16), 2272 – 2274 |
1998 |
| 168 |
V. E. Borisenko, O. V. Sergeev, N. V. Gaponenko, A. V. Mudryi, E. A. Stepanova, A. I. Rat, A. S. Baran, J. C. Pivin, J. F. McGilp.
Erbium luminescence in sol-gel derived oxide glass films |
Spectrochimica Acta A Vol. 54. – P. 2177–2182 |
1998 |
| 169 |
Hole mobility in Cr-doped p-type b-FeSi2 single crystals |
No info |
1998 |
| 170 |
N. V. Gaponenko, V. N. Bogomolov, S. V. Gaponenko, A. M. Kapitonov, A. V. Prokofiev, S. M. Samoilovich.
Photonic stop band in a three-dimensional SiO2/TiO2 lattice |
Phys. Stat. Sol. (a) Vol. 165. – P. 119–122 |
1998 |
| 171 |
V. E. Borisenko, O. V. Sergeev, N. V. Gaponenko, A. V. Mudryi, E. A. Stepanova, A. I. Rat, A. S. Baran, J. C. Pivin, J. F. McGilp.
Erbium and terbium luminescence from sol-gel derived In2O3 films on porous silicon |
Phys. Stat. Sol. (a) Vol. 165. P. 131–134 |
1998 |
| 172 |
V. E. Borisenko, S. K. Lazarouk, P. Jaguiro.
Integrated optoelectronic unit based on porous silicon |
Phys. Stat. Sol. (a) 165(1), 87 – 90 |
1998 |
| 173 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, I. E. Tralle, D. B. Migas.
Transport property simulation of p type FeSi2 |
Phys. Stat. Sol. (b) 203(1), 183 – 187 |
1998 |
| 174 |
L. I. Ivanenko, H. Lange, Y. Tomm, E. Arushanov.
Hole mobility in Cr-doped p-type -FeSi2 single crystals |
Phys. Stat. Sol. (b) 210 (1), 187-194 |
1998 |
| 175 |
A. L. Danilyuk, V.V. Uglov, N.N. Cherenda, V.V. Khodasevich, A.Wenzel, J. Gerlach, B. Raushenbach.
Successive implantation of aluminium by carbon and nitrogen ions |
Surface and Coatings Technology Vol.103/104. P.312-316. |
1998 |
| 176 |
A. L. Danilyuk, I. S. Molchan, V.I. Kurmashev, Yu.V. Timashkov.
Memory element based on the layered galvanomagnetic structure |
IEEE Trans. Magnetic. V. 34(4). - P.1078-1080. |
1998 |
| 177 |
A. L. Danilyuk, V.V. Uglov, N.N. Cherenda.
Effect of Oxygen Ion Implantation on the Properties of Al and Si |
Inorganic Materials V.34, No.8.- P.783-786. |
1998 |
| 178 |
V. E. Borisenko, A. B. Filonov, V. A. Novikov, A. N. Kholod, L. Vervoort, F. Bassani, F. Arnaud d, A. Saúl.
Grain interaction effect in electronic properties of silicon nanosize films |
Appl. Phys. Lett 70(6), 744 – 746 |
1997 |
| 179 |
Physics, Chemistry and Application of Nanostructures |
No info |
1997 |
| 180 |
Strong 1.53 (m luminescence from erbium-containing nanoclusters in sol-gel derived oxide films |
Physics, Chemistry and Application of Nanostructures pp. 167 - 171 |
1997 |
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