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Results 1 - 20 of about 35 publications for Author: A. B. Filonov
N |
Title |
Journal or book |
Year |
1 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas. New semiconducting silicide Ca3Si4 |
J. Phys.: Condens. Matter 19, 346207 |
2007 |
2 |
V. E. Borisenko, A. B. Filonov, L. I. Ivanenko, V. L. Shaposhnikov, A. E. Krivosheev, G. Behr, J. Schumann. Thermoelectric efficiency of single crystal semiconducting ruthenium silicide |
Semiconductors 40(1), 27-32 |
2006 |
3 |
V. E. Borisenko, A. B. Filonov, L. I. Ivanenko, A. E. Krivosheev, G. Behr, J. Schumann, D. Souptel. Transport and thermoelectric properties of semiconducting rhenium silicide |
Semiconductors Vol. 39, No. 4 pp. 395–399 |
2005 |
4 |
V. E. Borisenko, A. B. Filonov, L. I. Ivanenko, V. L. Shaposhnikov, A. V. Krivosheeva. Structural, electronic and optical properties of a new binary phase |
Phys. Stat. Sol. (b) 242(14), 2864-2871 |
2005 |
5 |
V. E. Borisenko, L. Miglio, M. Rebien, G. Behr, W. Henrion, D. B. Migas, A. V. Krivosheeva, V. L. Shaposhnikov, L. I. Ivanenko, A. B. Filonov, J. Schumann. Structural, electronic and optical properties of semiconducting rhenium silicide |
J. Phys.: Condens. Matter 16(1), 303–312 |
2004 |
6 |
V. E. Borisenko, A. B. Filonov, L. I. Ivanenko, V. L. Shaposhnikov, A. V. Krivosheeva, D. B. Migas, G. Behr, L. Miglio, J. Schumann. Electronic properties of semiconducting silicides: fundamentals and recent predictions |
Thin Solid films 461(1), 141–147 |
2004 |
7 |
V. E. Borisenko, A. B. Filonov, L. I. Ivanenko, V. L. Shaposhnikov, A. E. Krivosheev, A. V. Krivosheeva, D. B. Migas. Semiconducting silicides: properties and aspects of application |
Doklady BSUIR ¹3 (7), pp. 168-179 – in Russian |
2004 |
8 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, A. E. Krivosheev, G. Behr, J. Schumann, H. Vinzelberg, D. Souptel. Electronic structure of semiconducting rhenium silicide in respect to its thermoelectric properties |
IEEE Trans-CPMT-A |
2004 |
9 |
V. E. Borisenko, A. B. Filonov, L. I. Ivanenko, V. L. Shaposhnikov, G. Behr, J. Schumann, H. Vinzelberg, D. Souptel, A. Plotnikov. Transport properties of Mn-doped Ru2Si3 |
Microelectronic Engineering 70(2-4), 209-214 |
2003 |
10 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, A. E. Krivosheev, A. V. Krivosheeva. Effect of lattice deformation on semiconducting properties of CrSi2 |
Semiconductors 37, No. 4, pp. 384–389 |
2003 |
11 |
V. E. Borisenko, S. Paschen, D. Souptel, H. Vinzelberg, J. Schumann, G. Behr, A. E. Krivosheev, L. I. Ivanenko, A. B. Filonov, A. Bentien. Thermoelectric properties of Mn-doped Ru2Si3 |
Proceedings of International Conference on Thermoelectrics pp.157-160 |
2003 |
12 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, A. E. Krivosheev, A. V. Krivosheeva. Effect of stresses in electronic properties of chromium disilicide |
Microelectronic Engineering 64(1), 219-223 |
2002 |
13 |
V. E. Borisenko, A. B. Filonov, L. I. Ivanenko, V. L. Shaposhnikov, D. B. Migas, G. Behr, J. Schumann, H. Vinzelberg. Transport properties of semiconducting rhenium silicide |
Microelectronic Engineering 64(1), 225-232 |
2002 |
14 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, D. B. Migas, A. Heinrich. Narrow-gap semiconducting silicides: the band structure |
Microelectronic Engineering 50(1-4), 249 – 255 |
2000 |
15 |
V. E. Borisenko, A. B. Filonov, W. Henrion, H. Lange. Electronic and optical properties of semiconducting iron disilicide |
J. Luminescence 80, 479 – 484 |
1999 |
16 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, H. Lange, A. Heinrich. Electronic properties of semiconducting rhenium silicide |
Europhys. Lett 46(3), 376 – 381 |
1999 |
17 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, H. Lange, A. Heinrich. Electronic properties of isostructural ruthenium and osmium silicides and germanides |
Phys. Rev. B 60(24), 16494 – 16498 |
1999 |
18 |
V. E. Borisenko, A. B. Filonov, S. V. Gaponenko, V.S. Gurin. Physics, Chemistry and Application of Nanostructures |
Book World Scientific, Singapore |
1999 |
19 |
V. E. Borisenko, A. B. Filonov, A. L. Pushkarchuk, A. N. Kholod, F. Bassani, V. M. Zelenkovskii, F. Arnaud d. Oxygen effect in optical properties of nanosize silicon clusters |
Phys. Rev. B 57(3), 1394 – 1397 |
1998 |
20 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, D. B. Migas, W. Henrion, H. Lange, G. Behr, M. Rebien, P. Stauss. Theoretical and experimental study of interband optical transitions in semiconducting iron disilicide |
J. Appl. Phys 83(8), 4410 – 4414 |
1998 |
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