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Results 21 - 37 of about 37 publications for Author: A. L. Danilyuk
| N |
Title |
Journal or book |
Year |
| 21 |
A. L. Danilyuk, A. V. Korolev.
Universal quantum gate based on silicon/insulator structure |
Proceedings of the Belorussian Engineering Academy ¹ 2 (14)/2, pp. 72-74 (in Russian). |
2002 |
| 22 |
D. A. Podryabinkin, A. L. Danilyuk.
Evolution of two-level system in a resonant periodic field (in conditions of measurements) |
Proceedings of the Belorussian Engineering Academy 1(11)/3, pp. 66-68. (in Russian) |
2001 |
| 23 |
D. A. Podryabinkin, A. L. Danilyuk.
Models of logic spin elements for quantum calculations |
Proceedings of the Belorussian Engineering Academy 1(11)/3-pp.69-71 (in Russian) |
2001 |
| 24 |
V. E. Borisenko, A. L. Danilyuk, J. A. Berashevich, A. N. Kholod.
Charge-carrier transport in nanometer-sized periodic Si/CaF2 structures with participation of traps |
Semiconductors 35(1), 112 – 116 |
2001 |
| 25 |
V. E. Borisenko, A. L. Danilyuk, J. A. Berashevich, A. N. Kholod, F. Arnaud d.
Charge effects and related transport phenomena in nanosize silicon/insulator structures |
Microelectronics, Microsystems and Nanotechnology pp. 33 – 36 |
2001 |
| 26 |
V. E. Borisenko, A. L. Danilyuk, A. N. Kholod, F. Bassani, F. Arnaud d, S. Ménard.
Electroluminescence simulation of multiquantum well silicon structures |
J. Appl. Phys 85(10), 7219 – 7223 |
1999 |
| 27 |
V. E. Borisenko, A. L. Danilyuk, A. N. Kholod.
Electroluminescence from nanometer-sized layered silicon structures |
Russian Microelectronics 27(4), 233 – 239 |
1998 |
| 28 |
A. L. Danilyuk, V.V. Uglov, N.N. Cherenda, V.V. Khodasevich, A.Wenzel, J. Gerlach, B. Raushenbach.
Successive implantation of aluminium by carbon and nitrogen ions |
Surface and Coatings Technology Vol.103/104. P.312-316. |
1998 |
| 29 |
A. L. Danilyuk, I. S. Molchan, V.I. Kurmashev, Yu.V. Timashkov.
Memory element based on the layered galvanomagnetic structure |
IEEE Trans. Magnetic. V. 34(4). - P.1078-1080. |
1998 |
| 30 |
A. L. Danilyuk, V.V. Uglov, N.N. Cherenda.
Effect of Oxygen Ion Implantation on the Properties of Al and Si |
Inorganic Materials V.34, No.8.- P.783-786. |
1998 |
| 31 |
A. L. Danilyuk, I.I. Abramov.
Model of coherent transport in metal-insulator-midband gap semiconductor-insulator-semiconductors |
Appl. Phys. Lett Vol.71, No. 5.- P.665-667. |
1997 |
| 32 |
A. L. Danilyuk, A.I. Nareiko.
The Oscillatory Relaxation of Surface Conduction of Silicon After Low Magnetic Field Action |
Surface No.9.- P.27-33 (In Russian). |
1996 |
| 33 |
A. L. Danilyuk, V.I. Kurmashev, A.L. Matyushkov.
Magnetostatic field influence on electrodeposition of metal films |
Thin Solid films V.189, P.247-255. |
1990 |
| 34 |
A. L. Danilyuk, V. A. Labunov, V.I. Kurmashev, A.L. Matyushkov.
Magnetostatic Field Influence on Electrodeposition of Cuprum |
Proceedings of USSR Academy of Sciences V.311, No.1.- P.139-142. |
1990 |
| 35 |
A. L. Danilyuk, I.I. Abramov.
Occupancy Model of the Semiconductor Surface Band States Including Correlation Interactions |
Surface No.8.- P.17-20 (In Russian). |
1989 |
| 36 |
A. L. Danilyuk, I.I. Abramov.
Influence of The Electron Properties of the Interface on the Voltage-Current Characteristic of the Stationary Discharge Plasma-Semiconductor Contact |
Surface No.7.- P.62-67 (In Russian). |
1987 |
| 37 |
A. L. Danilyuk, E.E. Tkharev.
Electron density and potential distribution at a plasma-insulator interface |
Vacuum Vol.35, No.4-5. P.183-187. |
1985 |
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