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Results 1 - 20 of about 160 publications for Author: V. E. Borisenko
| N |
Title |
Journal or book |
Year |
| 1 |
D. B. Migas, V. E. Borisenko.
Effects of oxygen, fluorine, and hydroxyl passivation on electronic properties of <001>-oriented silicon nanowires |
J. Appl. Phys 104(2), 024314 |
2008 |
| 2 |
V. E. Borisenko, V. L. Shaposhnikov, A. V. Krivosheeva, F. Arnaud d, J. L. Lazzari.
Structural, electronic and optical properties of II |
Phys. Stat. Sol. (b) 245(1), 142–148 |
2008 |
| 3 |
V. E. Borisenko, A. L. Danilyuk, A. S. Panfilenok.
Oscillations of tunnel magnetoresistance in ferromagnet-insulator-ferromagnet structures |
Technical Physics 53(4) 479-484 |
2008 |
| 4 |
V. E. Borisenko, A. L. Danilyuk, A. V. Korolev, A.M. Giro.
Spatial magnetic field distribution of micrometer size thin-film magnetic head |
Doklady BSUIR ¹ 1(17), pp. 140-144 in Russian |
2007 |
| 5 |
V. E. Borisenko, A. A. Leshok, S. K. Lazarouk, V. A. Labunov, D. A. Sasinovich, P. S. Katsuba.
Electroluminescence from nanostructured silicon embedded in anodic alumina |
Semiconductors 41(9), 1109-112 |
2007 |
| 6 |
V. E. Borisenko, S. K. Lazarouk, V. A. Labunov, A.V. Dolbik.
Combustion and explosion of nanostructured silicon in microsystem devices |
Semiconductors 41(9), 1113–1116 |
2007 |
| 7 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas.
New semiconducting silicide Ca3Si4 |
J. Phys.: Condens. Matter 19, 346207 |
2007 |
| 8 |
V. E. Borisenko, D. B. Migas.
Structural, electronic, and optical properties of <001>-oriented SiGe nanowires |
Phys. Rev. B 76(3), 035440 (9 pages) |
2007 |
| 9 |
V. E. Borisenko, V. L. Shaposhnikov, D. B. Migas.
Isostructural BaSi2, BaGe2 and SrGe2: electronic and optical properties |
Phys. Stat. Sol. (b) 244(7), 2611-2618 |
2007 |
| 10 |
V. E. Borisenko, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, V. N. Rodin.
Electronic and optical properties of Ir3Si5 |
Phys. Stat. Sol. (b) 244(9), 3178-3182 |
2007 |
| 11 |
V. E. Borisenko, D. B. Migas.
Tailoring the character of the band-gap in <011>-, <111>- and <112>-oriented silicon nanowires |
Nanotechnology 18(37), 375703 |
2007 |
| 12 |
V. E. Borisenko, A. L. Danilyuk, A. V. Korolev.
Nanometrology of spin polarization of fluorine nuclei in optically excited Si/CaF2 nanostructure |
Elektronika (XLVII), no 5, pp. 42 |
2006 |
| 13 |
V. E. Borisenko, J. A. Berashevich, N.V. Grib.
Equivalent electrical network of the DNA molecule |
Russian Microelectronics , V 35, No. 6, P. 313-320 |
2006 |
| 14 |
V. E. Borisenko, J. A. Berashevich, N.V. Grib.
Dynamics of charge carrier transfer in DNA molecule |
Biophysics , in press |
2006 |
| 15 |
V. E. Borisenko, J. A. Berashevich, N.V. Grib.
Role of structural reorganization in charge carrier transfer in the DNA molecule |
Biophysics , in press |
2006 |
| 16 |
V. E. Borisenko, A. L. Danilyuk, A. V. Krivosheeva, A. V. Korolev, A.V. Andreyenka.
Multichip Quantum Computing Cluster |
Doklady BSUIR ¹ 5, p. 57, (Proceedings of Conference « New manufacturing methods of multichip packages») in Russian |
2006 |
| 17 |
V. E. Borisenko, A. B. Filonov, L. I. Ivanenko, V. L. Shaposhnikov, A. E. Krivosheev, G. Behr, J. Schumann.
Thermoelectric efficiency of single crystal semiconducting ruthenium silicide |
Semiconductors 40(1), 27-32 |
2006 |
| 18 |
V. E. Borisenko, S. K. Lazarouk, J. A. Berashevich.
Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier |
Semiconductors 40(2), 234-239 |
2006 |
| 19 |
V. E. Borisenko, S. V. Gaponenko, V.S. Gurin.
Physics, Chemistry and Application of Nanostructures |
Book World Scientific, Singapore |
2005 |
| 20 |
V. E. Borisenko, A. A. Leshok, S. K. Lazarouk, V. A. Labunov.
Efficiency of avalanche light emitting diodes based on porous silicon |
Semiconductors 39(1), 136-138 |
2005 |
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