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Results 41 - 60 of about 160 publications for Author: V. E. Borisenko

N Title Journal or book Year
41 V. E. Borisenko, A. L. Danilyuk, J. A. Berashevich, A. N. Kholod.
Carrier transport and related phenomena in nanosize periodic silicon/insulator structures
Materials Science and Engineering B101(1), 111-118 2003
42 V. E. Borisenko, A. L. Danilyuk, J. A. Berashevich.
Digital devices based on tunnel resonant transport of charge carriers in periodic Si/CaF2 nanostructures
Materials Science and Engineering B101(1), 300-304 2003
43 V. E. Borisenko, V. L. Shaposhnikov, A. V. Krivosheeva.
Electronic structure of stressed CrSi2
Materials Science and Engineering B101(1), 309-312 2003
44 V. E. Borisenko, A. B. Filonov, L. I. Ivanenko, V. L. Shaposhnikov, G. Behr, J. Schumann, H. Vinzelberg, D. Souptel, A. Plotnikov.
Transport properties of Mn-doped Ru2Si3
Microelectronic Engineering 70(2-4), 209-214 2003
45 V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, A. E. Krivosheev, A. V. Krivosheeva.
Effect of lattice deformation on semiconducting properties of CrSi2
Semiconductors 37, No. 4, pp. 384–389 2003
46 V. E. Borisenko, A. L. Danilyuk, J. A. Berashevich, A. V. Korolev.
Memory Element Based on Si/CaF2 Periodic Nanostructures
Technical Physics Vol. 48 No. 1, pp. 63-67 2003
47 V. E. Borisenko, S. Paschen, D. Souptel, H. Vinzelberg, J. Schumann, G. Behr, A. E. Krivosheev, L. I. Ivanenko, A. B. Filonov, A. Bentien.
Thermoelectric properties of Mn-doped Ru2Si3
Proceedings of International Conference on Thermoelectrics pp.157-160 2003
48 V. E. Borisenko, J. A. Berashevich, N.V. Grib.
Possibilities of application of DNA molecule as a switching element
Doklady BSUIR , 1(2), P. 20-28, (in Russian) 2003
49 V. E. Borisenko, J. A. Berashevich, N.V. Grib.
Switching elements on the basis of DNA molecule
Proceedings of the Belorussian Engineering Academy , 1(15)/4, P. 98-100, (in Russian) 2003
50 D. A. Podryabinkin, A. L. Danilyuk, V. E. Borisenko.
Model and Logic Elements for Quantum Calculation on Spin Systems in Resonance Fields
Electromagnetic waves and electronic systems V.7-3. - pp. 67-72. (in Russian) 2002
51 V. E. Borisenko, L. I. Ivanenko, G. Behr, C. R. Spinella.
RuSi2: evidence of a new binary phase in the ruthenium
J. Cryst. Growth 236, 572-576 2002
52 V. E. Borisenko, J. A. Berashevich, B. V. Kamenev.
Injection excitation of luminescence in multilayer nc-Si/insulator structures
Semiconductors 36(2), 213-218 2002
53 V. E. Borisenko, A. L. Danilyuk.
Model and logic gates for quantum computing with a two level system in a resonant frequency field
Russian Microelectronics 31(2), 116-121 2002
54 V. E. Borisenko, V. L. Shaposhnikov, A. E. Krivosheev, A. V. Krivosheeva, A. N. Kholod.
Band structure of Mg2Si and Mg2Ge semiconducting compound with a strained crystal lattice
Semiconductors 36(5), 496-500 2002
55 V. E. Borisenko, A. L. Danilyuk, J. A. Berashevich.
Resonance transfer of charge carriers in Si/CaF2 periodic nanostructures via trap states in insulator layers
Semiconductors 36(6), 679-684 2002
56 V. E. Borisenko, V. L. Shaposhnikov, D. B. Migas, L. Miglio.
Structural, electronic and optical properties of Ru2Si3, Ru2Ge3, Os2Si3 and Os2Ge3
Phys. Stat. Sol. (b) 231(1), 171-180 2002
57 V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, A. E. Krivosheev, A. V. Krivosheeva.
Effect of stresses in electronic properties of chromium disilicide
Microelectronic Engineering 64(1), 219-223 2002
58 V. E. Borisenko, A. B. Filonov, L. I. Ivanenko, V. L. Shaposhnikov, D. B. Migas, G. Behr, J. Schumann, H. Vinzelberg.
Transport properties of semiconducting rhenium silicide
Microelectronic Engineering 64(1), 225-232 2002
59 V. E. Borisenko, J. A. Berashevich, N.V. Grib.
Possibilities of DNA molecule for electronic processing of information
Proceedings of the Belorussian Engineering Academy , 1(13)/2, P. 58-61, (in Russian) 2002
60 V. E. Borisenko, R. Kudrawiec, L. Bryja, J. Misiewicz, G. E. Thompson, P. Skeldon, B. Hamilton, J. C. Pivin, E. A. Stepanova, N. V. Gaponenko, O. V. Sergeev, A. P. Stupak.
Terbium photoluminescence in polysiloxane films
Mater. Sci. Eng. B Vol. 81, ¹ 1-3. – P. 191-193 2001
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