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Results 81 - 100 of about 160 publications for Author: V. E. Borisenko
| N |
Title |
Journal or book |
Year |
| 81 |
V. E. Borisenko, A. B. Filonov, W. Henrion, H. Lange.
Electronic and optical properties of semiconducting iron disilicide |
J. Luminescence 80, 479 – 484 |
1999 |
| 82 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, H. Lange, A. Heinrich.
Electronic properties of semiconducting rhenium silicide |
Europhys. Lett 46(3), 376 – 381 |
1999 |
| 83 |
V. E. Borisenko, A. L. Danilyuk, A. N. Kholod, F. Bassani, F. Arnaud d, S. Ménard.
Electroluminescence simulation of multiquantum well silicon structures |
J. Appl. Phys 85(10), 7219 – 7223 |
1999 |
| 84 |
V. E. Borisenko, A. N. Kholod, F. Arnaud d, A. Zaslavsky.
Current oscillations in semiconductor-insulator multiple quantum wells |
Phys. Rev. B 60(23), 15975 – 15979 |
1999 |
| 85 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, H. Lange, A. Heinrich.
Electronic properties of isostructural ruthenium and osmium silicides and germanides |
Phys. Rev. B 60(24), 16494 – 16498 |
1999 |
| 86 |
V. E. Borisenko, A. B. Filonov, S. V. Gaponenko, V.S. Gurin.
Physics, Chemistry and Application of Nanostructures |
Book World Scientific, Singapore |
1999 |
| 87 |
V. E. Borisenko, A. B. Filonov, A. L. Pushkarchuk, A. N. Kholod, F. Bassani, V. M. Zelenkovskii, F. Arnaud d.
Oxygen effect in optical properties of nanosize silicon clusters |
Phys. Rev. B 57(3), 1394 – 1397 |
1998 |
| 88 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, D. B. Migas, W. Henrion, H. Lange, G. Behr, M. Rebien, P. Stauss.
Theoretical and experimental study of interband optical transitions in semiconducting iron disilicide |
J. Appl. Phys 83(8), 4410 – 4414 |
1998 |
| 89 |
V. E. Borisenko, A. B. Filonov, A. N. Kholod, F. Bassani, F. Arnaud d, A. Saúl.
Grain effect in electronic properties of silicon epitaxial nanostructures |
Comp. Mat. Sci 10(1-4), 148 – 153 |
1998 |
| 90 |
V. E. Borisenko, A. L. Danilyuk, A. N. Kholod.
Electroluminescence from nanometer-sized layered silicon structures |
Russian Microelectronics 27(4), 233 – 239 |
1998 |
| 91 |
V. E. Borisenko, S. K. Lazarouk, A. V. Mudryi.
Room-temperature formation of erbium-related centers in anodic alumina |
Appl. Phys. Lett 73(16), 2272 – 2274 |
1998 |
| 92 |
V. E. Borisenko, O. V. Sergeev, N. V. Gaponenko, A. V. Mudryi, E. A. Stepanova, A. I. Rat, A. S. Baran, J. C. Pivin, J. F. McGilp.
Erbium luminescence in sol-gel derived oxide glass films |
Spectrochimica Acta A Vol. 54. – P. 2177–2182 |
1998 |
| 93 |
V. E. Borisenko, O. V. Sergeev, N. V. Gaponenko, A. V. Mudryi, E. A. Stepanova, A. I. Rat, A. S. Baran, J. C. Pivin, J. F. McGilp.
Erbium and terbium luminescence from sol-gel derived In2O3 films on porous silicon |
Phys. Stat. Sol. (a) Vol. 165. P. 131–134 |
1998 |
| 94 |
V. E. Borisenko, S. K. Lazarouk, P. Jaguiro.
Integrated optoelectronic unit based on porous silicon |
Phys. Stat. Sol. (a) 165(1), 87 – 90 |
1998 |
| 95 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, I. E. Tralle, D. B. Migas.
Transport property simulation of p type FeSi2 |
Phys. Stat. Sol. (b) 203(1), 183 – 187 |
1998 |
| 96 |
V. E. Borisenko, A. B. Filonov, V. A. Novikov, A. N. Kholod, L. Vervoort, F. Bassani, F. Arnaud d, A. Saúl.
Grain interaction effect in electronic properties of silicon nanosize films |
Appl. Phys. Lett 70(6), 744 – 746 |
1997 |
| 97 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, N. N. Dorozhkin, D. B. Migas, H. Lange.
Electronic properties of osmium disilicide |
Appl. Phys. Lett 70(8), 976 – 977 |
1997 |
| 98 |
V. E. Borisenko, B. O, M. Cavanagh, A. I. Rat, E. A. Stepanova, A. V. Mudryi, O. S. Katernoga, V. M. Parkun, N. V. Gaponenko.
Erbium and terbium photoluminescence in silica sol-gel films on porous alumina |
Thin Solid films Vol. 297, ¹ 1–2. – P. 202–206 |
1997 |
| 99 |
V. E. Borisenko, A. B. Filonov, A. N. Kholod.
Electronic properties of nanosize silicon-oxygen clusters |
Phys. Stat. Sol. (a) 165(1), 57 – 61 |
1997 |
| 100 |
V. E. Borisenko, A. B. Filonov, W. Henrion, H. Lange, St. Brehme, A. Heinrich, G. Behr, H. Griessmann.
Semiconducting transition metal silicides: electronic structure, electrical and thermoelectrical properties |
Proceedings of International Conference on Thermoelectrics pp. 267 - 274 |
1997 |
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