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Results 121 - 140 of about 160 publications for Author: V. E. Borisenko
| N |
Title |
Journal or book |
Year |
| 121 |
V. E. Borisenko, L. I. Ivanenko, S. Y. Nikitin.
Semiconducting properties of chromium disilicide |
Mikroelektronika V.21, N2, pp.69-77 (in Russian) |
1992 |
| 122 |
V. E. Borisenko, L. I. Ivanenko, D. I. Zarovskii.
Structure and phase transitions in transiently heated thin film Fe- Si system |
Mikroelektronika V.21, N6, pp.27-29 (in Russian) |
1992 |
| 123 |
V. E. Borisenko, A. B. Filonov.
Electronic structure calculations for YBa2Cu3O7 by the self-consistent crystalline orbital method |
Phys. Stat. Sol. (b) 168(2), 467 – 477 |
1991 |
| 124 |
V. E. Borisenko, V. V. Tokarev, A. I. Demchenko, A. I. Ivanov.
Influence of boron implantation on phase transformation in nickel silicides |
Appl. Surf. Sci 44(3), 241-247 |
1990 |
| 125 |
V. E. Borisenko, D. I. Zarovskii, V. V. Tokarev, T. M. Pyatkova.
Argon ion implantation influence on phase formation and structure of nickel silicides |
Phys. Stat. Sol. (a) 111(2), 499 – 505 |
1989 |
| 126 |
V. E. Borisenko, V. V. Tokarev, T. M. Pyatkova, A. I. Demchenko.
Growth of epitaxial nickel disilicide during rapid thermal processing of argon-implanted nickel films on silicon |
Phys. Stat. Sol. (a) 116(1), 331 – 336 |
1989 |
| 127 |
V. E. Borisenko, A. B. Filonov, S. Y. Nikitin, A. L. Pushkarchuk.
Electronic property simulation of YBa2Cu3O7 films |
Phys. Stat. Sol. (b) 155(1), K127 - K130 |
1989 |
| 128 |
V. E. Borisenko, L. I. Ivanenko, D. I. Zarovskii, G.V. Litvinovich.
Characterization of chromium silicides formed by rapid thermal processing |
Izvestiya vuzov. Physica. N11, p.128-129 (in Russian) |
1989 |
| 129 |
V. E. Borisenko, D. I. Zarovskii, V. V. Tokarev.
Influence of argon implantation on the formation of platinum silicides |
Phys. Stat. Sol. (a) 107(1), K33 - K35 |
1988 |
| 130 |
V. E. Borisenko, S. G. Yudin.
Implanted impurity behavior in silicon subjected to transient heating |
Phys. Stat. Sol. (a) 109(1), 395 – 402 |
1988 |
| 131 |
V. E. Borisenko, S. G. Yudin.
Steady-state solubility of substitutional impurities in silicon |
Phys. Stat. Sol. (a) 101(1), 123 – 127 |
1987 |
| 132 |
V. E. Borisenko, V. A. Labunov, A. M. Dorofeev.
High-temperature treatment of porous silicon |
Phys. Stat. Sol. (a) 102(1), 193 – 198 |
1987 |
| 133 |
V. E. Borisenko, A. G. Dutov, K. E. Lobanova, S. G. Yudin.
Redistribution of phosphorus in implanted laser-annealed silicon during subsequent heat treatment lasting up to tens of seconds |
Sov. Phys. Semicond 21(8), 891 – 892 |
1987 |
| 134 |
V. E. Borisenko, S. G. Yudin, R. M. Bayazitov, D. A. Konovalov, I. B. Khaibullin.
Precipitation of a supersaturated substitutional solution of phosphorus in silicon due to heat treatment for periods of seconds |
Sov. Phys. Semicond 21(8), 917 – 918 |
1987 |
| 135 |
V. E. Borisenko, V. Parkhutik.
RBS study of transient thermal and anodic oxidation of tantalum films |
Phys. Stat. Sol. (a) 93(1), 123 – 130 |
1986 |
| 136 |
V. E. Borisenko, V. A. Labunov, A. Nylandsted Larsen, D. I. Zarovskii.
TiSi2 formation during brief heat treatment of titanium films on silicon |
Sov. Phys. Tech. Phys 31(5), 599 – 600 |
1986 |
| 137 |
V. E. Borisenko, V. A. Labunov.
Diffusion of arsenic through porous silicon as a result of heat treatment by exposure to incoherent light for tens of seconds |
Sov. Phys. Semicond 20(5), 586 – 588 |
1986 |
| 138 |
V. E. Borisenko, D. I. Zarovskii.
Formation of chromium silicides by annealing for times < 1 minute |
Sov. Phys. Tech. Phys 30(10), 1188 |
1985 |
| 139 |
V. E. Borisenko, V. V. Gribkovskii, F. F. Komarov, V. S. Solov'yev, P. I. Gaiduk.
Structure modification in As-ion implanted silicon layers during pulse thermal treatment |
Rad. Eff. Lett 87(3), 109 – 115 |
1985 |
| 140 |
V. E. Borisenko, L. I. Ivanenko, V. A. Labunov, D. I. Zarovskii, V. V. Tokarev, V. Hitko.
Thin film silicide formation by rapid thermal processing |
Sov. J. Foreign. Electron. Techn. V. 291, N8, pp.27-53 (review article) - in Russian |
1985 |
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