|
|
 |
 |
|
|
 |
|
|
|
Results 141 - 160 of about 160 publications for Author: V. E. Borisenko
| N |
Title |
Journal or book |
Year |
| 141 |
V. E. Borisenko, V. A. Labunov, V. V. Gribkovskii, S. G. Yudin.
Pulsed heating of semiconductors |
Phys. Stat. Sol. (a) 86(2), 573 – 583 |
1984 |
| 142 |
V. E. Borisenko, A. Nylandsted Larsen.
Behaviour of implanted arsenic in silicon crystals subjected to transient heating with incoherent light |
Appl. Phys. A 33(1), 51 – 58 |
1984 |
| 143 |
V. E. Borisenko, L. Sarholt-Kristensen, A. Johansen, E. Johnson.
Sputtering on copper single crystals |
Nucl. Instr. Meth. Phys. Res. B 230(1-3), 684 – 688 |
1984 |
| 144 |
V. E. Borisenko, A. G. Dutov, K. E. Lobanova, V. A. Kolosov.
Radiation-stimulated redistribution of antimony in silicon |
Sov. Phys. Semicond 18(10), 1178 – 1179 |
1984 |
| 145 |
V. E. Borisenko, D. I. Zarovskii.
Ten-second annealing of implanted silicon by low-energy electrons |
Sov. Phys. Semicond 18(10), 1192 – 1194 |
1984 |
| 146 |
V. E. Borisenko, L. F. Gorskaya, A. G. Dutov, A. M. Dorofeev.
Redistribution of gold in single-crystal silicon during brief annealing by incoherent light |
Sov. Phys. Tech. Phys 29(10), 1184 – 1186 |
1984 |
| 147 |
V. E. Borisenko.
Formation of n-type layers in silicon as a result of bombardment with oxygen ions |
Sov. Phys. Semicond 17(1), 108 |
1983 |
| 148 |
V. E. Borisenko, A. Nylandsted Larsen.
Incoherent light induced diffusion of arsenic into silicon from spin-on source |
Appl. Phys. Lett 43(6), 582 – 584 |
1983 |
| 149 |
V. E. Borisenko, V. A. Labunov, V. V. Gribkovskii, V. A. Samuilov, K. D. Yashin.
Incoherent light annealing of phosphorus doped polycrystalline silicon |
Phys. Stat. Sol. (a) 75(1), 117 – 120 |
1983 |
| 150 |
V. E. Borisenko, A. M. Dorofeev.
Gettering of impurities by incoherent light annealed porous silicon |
Laser Solid Interactions and Transient Thermal Processing of Materials pp. 375 – 379 |
1983 |
| 151 |
V. E. Borisenko, A. Nylandsted Larsen, L. D. Nielsen.
Incoherent-light annealing of phosphorus implanted silicon, with solar cell production in view |
J. Phys C5/381 - C5/385 |
1983 |
| 152 |
V. E. Borisenko, A. Nylandsted Larsen, L. D. Nielsen.
Doping of silicon with arsenic and phosphorus from spin-on sources exposed to incoherent light |
J. Phys 44(10), C5/427 - C5/431 |
1983 |
| 153 |
V. E. Borisenko, V. A. Didik, R. Sh. Malkovich.
Diffusion of gold into silicon during bombardment by low-energy ions |
Sov. Phys. Tech. Phys 27(1), 115 – 117 |
1982 |
| 154 |
V. E. Borisenko, L. F. Gorskaya, A. G. Dutov, K. E. Lobanova.
Stimulation of the diffusion of phosphorus and antimony in silicon by bombardment with oxygen ions |
Sov. Phys. Semicond 16(5), 584 – 585 |
1982 |
| 155 |
V. E. Borisenko, V. A. Labunov.
Pulse electron beam annealing of phosphorus implanted silicon |
Laser and Electron Beam Interactions with Solids pp. 305 – 310 |
1982 |
| 156 |
V. E. Borisenko, V. A. Labunov.
Annealing of antimony implanted silicon with a halogen lamp irradiation |
Phys. Stat. Sol. (a) 72(2), K173 - K176 |
1982 |
| 157 |
V. E. Borisenko, V. A. Labunov, L. D. Buiko, V. A. Ukhov.
Influence of oxygen on radiation-stimulated diffusion of phosphorus in silicon |
Sov. Phys. Semicond 15(1), 1 – 3 |
1981 |
| 158 |
V. E. Borisenko, V. A. Labunov.
Influence of radiation-stimulated diffusion on the sputtering of silicon by low-energy ions |
Sov. Phys. Semicond 15(7), 816 – 817 |
1981 |
| 159 |
V. E. Borisenko, V. A. Labunov.
Diffusion of phosphorus in silicon stimulated by low-energy plasma-ion treatment |
Sov. Phys. Semicond 13(3), 355 – 356 |
1979 |
| 160 |
V. E. Borisenko, V. A. Labunov.
Temperature dependence of sputtering coefficient of silicon |
Sov. Phys. Solid State 20(4), 712 |
1978 |
|
|
 |
 |
|
 |
|
