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Results 61 - 80 of about 160 publications for Author: V. E. Borisenko
| N |
Title |
Journal or book |
Year |
| 61 |
V. E. Borisenko, S. V. Gaponenko, V.S. Gurin.
Physics, Chemistry and Application of Nanostructures |
Book World Scientific, Singapore |
2001 |
| 62 |
V. E. Borisenko.
Discovery and understanding of nanoworld in the XX th century: main achievements in the mirror of the Nobel Prizes |
Physics, Chemistry and Application of Nanostructures pp. 3 – 14 |
2001 |
| 63 |
V. E. Borisenko, O. V. Sergeev, R. Heiderhoff, L. J. Balk.
Nanostructured TiO2:Tb2O3 phosphor fabricated by sol gel method on porous anodic alumina |
Physics, Chemistry and Application of Nanostructures pp. 210 – 213 |
2001 |
| 64 |
V. E. Borisenko, A. L. Danilyuk, J. A. Berashevich, A. N. Kholod.
Charge-carrier transport in nanometer-sized periodic Si/CaF2 structures with participation of traps |
Semiconductors 35(1), 112 – 116 |
2001 |
| 65 |
V. E. Borisenko, A. N. Kholod, F. Bassani, F. Arnaud d, S. Ménard, M. Liniger, G. Guirleo.
Carrier dynamics modelling in a precharged Si/CaF2 heterostructure |
J. Appl. Phys 89(11), 6281-6284 |
2001 |
| 66 |
V. E. Borisenko, V. L. Shaposhnikov, D. B. Migas, W. Henrion, M. Rebien, L. Miglio, F. Marabelli, B. A. Cook.
Electronic and optical properties of isostructural β FeSi2 and OsSi2 |
Phys. Rev. B 64(7), 075208-1(-7) |
2001 |
| 67 |
V. E. Borisenko, A. N. Kholod, F. Arnaud d, A. Saúl, J. Fuhr.
Appearance of direct gap in silicon and germanium nanosize slabs |
Optical Material 17(1), 61-63 |
2001 |
| 68 |
V. E. Borisenko, V. L. Shaposhnikov, D. B. Migas, W. Henrion, M. Rebien, L. Miglio.
Optical properties of isostructural β FeSi2, OsSi2, Fe0.5Os0.5Si2 and Os0.5Fe0.5Si2 |
Optical Material 17(1), 335-338 |
2001 |
| 69 |
V. E. Borisenko, L. I. Ivanenko, V. L. Shaposhnikov, D. B. Migas, D. Lenssen, R. Crius, S. Mantl.
Optical properties of semiconducting Ru2Si3 |
Optical Material 17(1), 339-341 |
2001 |
| 70 |
V. E. Borisenko, A. L. Danilyuk, J. A. Berashevich, A. N. Kholod, F. Arnaud d.
Charge effects and related transport phenomena in nanosize silicon/insulator structures |
Microelectronics, Microsystems and Nanotechnology pp. 33 – 36 |
2001 |
| 71 |
V. E. Borisenko, S. K. Lazarouk, P. Jaguiro.
Avalanche porous silicon light emitting diodes for optical intra chip interconnects |
Microelectronics, Microsystems and Nanotechnology pp. 41 – 44 |
2001 |
| 72 |
V. E. Borisenko, A. B. Filonov, V. L. Shaposhnikov, D. B. Migas, A. Heinrich.
Narrow-gap semiconducting silicides: the band structure |
Microelectronic Engineering 50(1-4), 249 – 255 |
2000 |
| 73 |
V. E. Borisenko.
Semiconducting Silicides |
Book Springer, Berlin |
2000 |
| 74 |
V. E. Borisenko, A. N. Kholod, F. Bassani, F. Arnaud d, S. Ménard, M. Liniger.
Vertical electrical transport in Si/CaF2 nanocrystalline heterostructures |
Mater. Sci. Eng. B 69-70, 464 – 467 |
2000 |
| 75 |
V. E. Borisenko, A. A. Leshok, S. K. Lazarouk, C. Mazzoleni, L. Pavesi.
On the route to Si based interconnects |
Microelectronic Engineering 50(1-4), 81 – 86 |
2000 |
| 76 |
V. E. Borisenko, A. N. Kholod, F. Arnaud d, A. Saúl, J. Fuhr.
Electronic properties of germanium quantum films |
Phys. Rev. B 62(19), 12949 - 12954 |
2000 |
| 77 |
V. E. Borisenko, A. N. Kholod, F. Bassani, F. Arnaud d, S. Ménard, M. Liniger.
Charge carrier transport in Si/CaF2 heterostructures controlled by forming bias |
Phys. Stat. Sol. (a) 181(2), 561 - 568 |
2000 |
| 78 |
V. E. Borisenko.
Fundamental electronic properties of semiconducting silicides |
Silicides. Fundamentals and Applications pp. 108 – 125 |
2000 |
| 79 |
V. E. Borisenko, A. N. Kholod, F. Bassani, F. Arnaud d, S. Ménard, M. Liniger.
Room temperature negative differential resistance in Si/CaF2 quantum wells |
Physics, Chemistry and Application of Nanostructures pp. 23 – 27 |
1999 |
| 80 |
V. E. Borisenko, A. A. Leshok, S. K. Lazarouk, P. Jaguiro.
Porous silicon light emitting diode and photodetector integrated with a multilayer alumina waveguide |
Physics, Chemistry and Application of Nanostructures pp. 370 – 374 |
1999 |
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